Datasheet > MBRF20250CT

MBRF20250CT

更新时间： 2024-11-18 12:56:43

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	1201K
描述
20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF20250CT 数据手册

MBRF2040CT thru MBRF20250CT

Pb Free Plating Product

20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers

Unit : inch (mm)

ITO-220AB

Features

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

ꢀ

astic material used carries Underwriters Laboratory

.130(3.3)

.114(2.9)

Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

ꢀ

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

260 C/10 seconds,0.25”(6.35mm)from case

.032(.8)

MAX

(2.55)

Mechanical Data

(2.55)

ꢀ

Cases: Section Copper Strip TO-220FP

Terminals: Pure tin plated, lead free. solderable per

MIL-STD-750, Method 2026

Case

ꢀ

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings And Electrical Characteristics

Section Copper Strip TO-220FP

Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBRF2040CT

MBRF2060CT

MBRF20100CT

MBRF20150CT

MBRF20200CT

MBRF20250CT

Parameter

Symbol

Unit

MBRF2040CT

MBRF2060CT

MBRF20100CT

MBRF20150CT

MBRF20200CT

MBRF20250CT

Marking Code

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

250

175

250

Maximum DC Blocking Voltage

100

Maximum Forward Voltage@10A, T_A=25℃

@10A, T_A=125℃

0.70

0.57

0.84

0.79

0.70

0.95

0.81

0.71

0.95

0.87

0.77

1.0

0.90

0.80

1.0

0.95

0.85

V_F

T_J

@20A, T_A=25℃

Operating Temperature

℃

-50 ~ +150

Parameter

Forward Rectified Current

Forward Surge Current

Conditions

Symbol

Min.

Typ.

Max.

Unit

See Fig.1

I_O

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

I_FSM

150

V_R=V_RRM, T_A=25℃

0.1

Reverse Current

I_R

V_R=V_RRM, T_A=125℃

ΘJA

℃/W

Thermal Resistance

Junction to ambient

Diode Junction Capacitance

Storage Temperature

f=1MHz and applied 4V DC reverse voltage

C_J

T_STG

150

℃

-50

+150

Rev.05

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与MBRF20250CT相关器件

型号	品牌	获取价格	描述	数据表
MBRF2030C	MOSPEC	获取价格	Full Plastic Dual Schottky Barrier Power Rectifiers
MBRF2030CT	TGS	获取价格	TO-220F Plastic-Encapsulate Diodes
MBRF2030CT	MCC	获取价格	20 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBRF2030CT	DIOTECH	获取价格	SCHOTTKY BARRIER RECTIFIER
MBRF2030CT	HY	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBRF2030CT_V01	HY	获取价格	Schottky Barrier Recitifiers
MBRF2035	LGE	获取价格	Isolated 20.0AMP. Schottky Barrier Rectifiers
MBRF2035	TSC	获取价格	Isolated 20.0 AMPS. Schottky Barrier Rectifiers
MBRF2035_11	TSC	获取价格	20.0 AMPS. Isolated Schottky Barrier Rectifiers
MBRF2035_13	TSC	获取价格	20.0 AMPS. Isolated Schottky Barrier Rectifiers

与MBRF20250CT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF20250CT

MBRF20250CT 数据手册

与MBRF20250CT相关器件

与MBRF20250CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF20250CT

MBRF20250CT 数据手册

与MBRF20250CT相关器件

与MBRF20250CT相关文章

您还可以找

您在本页遇到什么问题？