MBRF2040CT thru MBRF20250CT
Pb
MBRF2040CT thru MBRF20250CT
Pb Free Plating Product
20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers
Unit : inch (mm)
ITO-220AB
Features
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Pl
ꢀ
astic material used carries Underwriters Laboratory
.130(3.3)
.114(2.9)
Classifications 94V-0
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
ꢀ
ꢀ
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
o
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
260 C/10 seconds,0.25”(6.35mm)from case
.032(.8)
MAX
.1
(2.55)
.1
Mechanical Data
(2.55)
ꢀ
ꢀ
Cases: Section Copper Strip TO-220FP
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Case
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings And Electrical Characteristics
Section Copper Strip TO-220FP
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBRF2040CT
MBRF2060CT
MBRF20100CT
MBRF20150CT
MBRF20200CT
MBRF20250CT
Parameter
Symbol
Unit
MBRF2040CT
MBRF2060CT
MBRF20100CT
MBRF20150CT
MBRF20200CT
MBRF20250CT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
40
28
40
60
42
60
100
70
150
105
150
200
140
200
250
175
250
V
V
V
Maximum DC Blocking Voltage
100
Maximum Forward Voltage@10A, TA=25℃
@10A, TA=125℃
0.70
0.57
0.84
0.79
0.70
0.95
0.81
0.71
0.95
0.87
0.77
1.0
0.90
0.80
1.0
0.95
0.85
-
V
VF
TJ
@20A, TA=25℃
Operating Temperature
℃
-50 ~ +150
Parameter
Forward Rectified Current
Forward Surge Current
Conditions
Symbol
Min.
Typ.
Max.
20
Unit
See Fig.1
IO
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
IFSM
150
VR=VRRM , TA=25℃
0.1
10
Reverse Current
IR
mA
VR=VRRM , TA=125℃
R
ΘJA
℃/W
pF
Thermal Resistance
Junction to ambient
30
Diode Junction Capacitance
Storage Temperature
f=1MHz and applied 4V DC reverse voltage
CJ
TSTG
150
℃
-50
+150
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/