Datasheet > MBRF20200CT

MBRF20200CT

更新时间： 2024-11-18 12:03:47

品牌	Logo	应用领域
TGS		二极管局域网
页数	文件大小	规格书
2页	1082K
描述
TO-220F Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MBRF20200CT 数据手册

TIGER ELECTRONIC CO.,LTD

TO-220F Plastic-Encapsulate Diodes

MBRF20100CT, 150CT, 200CT

SCHOTTKY BARRIER RECTIFIER

TO-220F

1. ANODE

2. CATHODE

3. ANODE

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Value

Unit

Symbol

Parameter

MBRF20100CT MBRF20150CT

MBRF20200CT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

100

150

200

140

RMS reverse voltage

105

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current

8.3ms half sine wave

150

I_FSM

Power dissipation

℃/W

℃

P_D

R_ΘJA

T_j

Thermal resistance from junction to ambient

Junction temperature

125

Storage temperature

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Device

Test conditions

Min

Typ

Max

Unit

MBRF20100CT

100

150

200

V_(BR)

I_R=1mA

Reverse voltage

MBRF20150CT

MBRF20200CT

MBRF20100CT

V_R=100V

V_R=150V

V_R=200V

0.15

I_R

Reverse current

MBRF20150CT

MBRF20200CT

MBRF20100CT

0.1

0.85

V_F

I_F=10A

Forward voltage

MBRF20150CT

MBRF20200CT

0.9

C_tot

MBRF20100CT- 20200CT

V_R=5V,f=1MHz

1000

Typical total capacitance

B,Apr,2012

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