Datasheet > MBRF20200CT

MBRF20200CT

更新时间： 2024-11-19 02:54:27

品牌	Logo	应用领域
竹懋 - CITC		局域网二极管
页数	文件大小	规格书
3页	99K
描述
20A High Power Schottky Barrier Rectifiersnull

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF20200CT 数据手册

MBRF2040CT THRU MBRF20200CT

20A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

ITO-220AB

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

0.189(4.80)

0.165(4.20)

0.130(3.30)

0.408(10.36)

0.382(9.70)

0.098(2.50)

• Silicon epitaxial planar chip, metal silicon junction.

• Suffix "G" indicates Halogen-free part, ex.MBRF2040CTG.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.600(15.5)

0.580(14.5)

0.138(3.50)

MAX

Marking code

0.339(8.60)

0.315(8.00)

0.055(1.4)

0.039(1.0)

0.114(2.90)

0.098(2.50)

0.171(4.35)MAX

0.067(1.7)

0.039(1.0)

0.512(13.0)

MIN

■ Mechanical data

0.035(0.90)

0.012(0.30)

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC ITO-220AB molded plastic body over

passivated chip.

0.110(2.80)

0.091(2.30)

0.031(0.80)MAX

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

150

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@10A, T_A= 25^OC @10A, T_A= 125^OC

V_F(V)

MBRF2040CT MBRF2040CT

MBRF2045CT MBRF2045CT

MBRF2060CT MBRF2060CT

MBRF2065CT MBRF2065CT

MBRF20100CT MBRF20100CT

MBRF20150CT MBRF20150CT

MBRF20200CT MBRF20200CT

31.5

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

Document ID : DS-11K58

Issued Date : 2010/05/05

Revised Date : 2012/05/31

Revision : C2

12 3

中文翻译

下载PDF

与MBRF20200CT相关器件

型号	品牌	获取价格	描述	数据表
MBRF20200-CT	ONSEMI	获取价格	SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRF20200CT_08	KEC	获取价格	SCHOTTKY BARRIER TYPE DIODE
MBRF20200CTD	DYELEC	获取价格	20 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBRF20200CTG	ONSEMI	获取价格	SWITCHMODE Schottky Power Rectifier
MBRF20200CTG	KERSEMI	获取价格	SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRF20200CTR	THINKISEMI	获取价格	20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF20200CTR	LITTELFUSE	获取价格	Littelfuse MBRF20200CTR系列肖特基位障二极管整流器的设计旨在提供具有
MBRF20200D	TSC	获取价格	20.0AMPS Isolated Schottky Barrier Rectifier
MBRF20200T-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF2020CT	DIOTECH	获取价格	SCHOTTKY BARRIER RECTIFIER

与MBRF20200CT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF20200CT

MBRF20200CT 数据手册

与MBRF20200CT相关器件

与MBRF20200CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF20200CT

MBRF20200CT 数据手册

与MBRF20200CT相关器件

与MBRF20200CT相关文章

您还可以找

您在本页遇到什么问题？