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MBRF20200CT PDF预览

MBRF20200CT

更新时间: 2024-11-18 11:11:27
品牌 Logo 应用领域
TAK_CHEONG 整流二极管肖特基二极管高压局域网
页数 文件大小 规格书
4页 146K
描述
20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier

MBRF20200CT 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220FP, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.19Is Samacsys:N
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBRF20200CT 数据手册

 浏览型号MBRF20200CT的Datasheet PDF文件第2页浏览型号MBRF20200CT的Datasheet PDF文件第3页浏览型号MBRF20200CT的Datasheet PDF文件第4页 
TAK CHEONG®  
SEMICONDUCTOR  
20A SCHOTTKY BARRIER DIODE  
Full Pack High Voltage Schottky  
Rectifier  
1
Specification Features:  
2
3
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High Voltage Wide Range Selection, 100V, 150V & 200V  
High Switching Speed Device  
Low Forward Voltage Drop  
TO-220FP  
DEVICE MARKING DIAGRAM  
Low Power Loss and High Efficiency  
Guard Ring for Over-voltage Protection  
High Surge Capability  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
Line 2 = MBRF  
Line 3 = 20xxxCT  
Line 4 = Polarity  
L xxyy  
Line 2  
Line 3  
Line 4  
RoHS Compliant  
Matte Tin(Sn) Lead Finish  
Terminal Leads Surface is Corrosion Resistant  
and can withstand to 260°C Wave Soldering or  
per MIL-STD-750, Method 2026.  
POLARITY CONFIGURATION  
1. Anode  
3. Anode  
2. Cathode  
MAXIMUM RATINGS (Per Leg, unless otherwise specified )  
Symbol  
Parameter  
MBRF20100CT  
MBRF20150CT  
MBRF20200CT  
Units  
VRRM  
VRWM  
VR  
Maximum Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
Maximum DC Reverse Voltage  
Average Rectified Forward Current  
Per Leg  
Per Package  
Non-repetitive Peak Forward Surge Current  
8.3mS Single Phase @ Rated Load  
100  
150  
200  
V
IF(AV)  
10  
20  
A
A
IFSM  
150  
TSTG  
TJ  
Storage Temperature Range  
-65 to +150  
+150  
°C  
°C  
Operating Junction Temperature  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
THERMAL CHARACTERISTICS  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Maximum Thermal Resistance, Junction-to-Case  
Maximum Thermal Resistance, Junction-to-Ambient (per leg)  
Value  
Units  
2.0  
60  
°C/W  
°C/W  
RθJC  
RθJA  
ELECTRICAL CHARACTERISTICS (Per Diode )  
TA = 25°C unless otherwise noted  
MBRF20100CT MBRF20150CT  
MBRF20200CT  
Test Condition  
Symbol  
Parameter  
Units  
(Note 1)  
Min  
---  
Max  
200  
Min  
---  
Max  
200  
Min  
---  
Max  
200  
IR  
Reverse Current  
Forward Voltage  
@ rated VR  
IF = 10A  
μA  
0.85  
0.95  
0.92  
1.00  
1.00  
1.25  
VF  
---  
---  
---  
V
IF = 20A  
Note/s:  
1. Tested under pulse condition of 300μS.  
Number: DB-151  
March 2010, Revision D  
Page 1  

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