Datasheet > MBRF20100CT

MBRF20100CT

更新时间： 2024-09-22 02:54:27

品牌	Logo	应用领域
竹懋 - CITC		局域网二极管
页数	文件大小	规格书
3页	99K
描述
20A High Power Schottky Barrier Rectifiersnull

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中文翻译

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数据手册

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MBRF20100CT 数据手册

MBRF2040CT THRU MBRF20200CT

20A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

ITO-220AB

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

0.189(4.80)

0.165(4.20)

0.130(3.30)

0.408(10.36)

0.382(9.70)

0.098(2.50)

• Silicon epitaxial planar chip, metal silicon junction.

• Suffix "G" indicates Halogen-free part, ex.MBRF2040CTG.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.600(15.5)

0.580(14.5)

0.138(3.50)

MAX

Marking code

0.339(8.60)

0.315(8.00)

0.055(1.4)

0.039(1.0)

0.114(2.90)

0.098(2.50)

0.171(4.35)MAX

0.067(1.7)

0.039(1.0)

0.512(13.0)

MIN

■ Mechanical data

0.035(0.90)

0.012(0.30)

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC ITO-220AB molded plastic body over

passivated chip.

0.110(2.80)

0.091(2.30)

0.031(0.80)MAX

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

150

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@10A, T_A= 25^OC @10A, T_A= 125^OC

V_F(V)

MBRF2040CT MBRF2040CT

MBRF2045CT MBRF2045CT

MBRF2060CT MBRF2060CT

MBRF2065CT MBRF2065CT

MBRF20100CT MBRF20100CT

MBRF20150CT MBRF20150CT

MBRF20200CT MBRF20200CT

31.5

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

Document ID : DS-11K58

Issued Date : 2010/05/05

Revised Date : 2012/05/31

Revision : C2

12 3

中文翻译

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与MBRF20100CT相关器件

型号	品牌	获取价格	描述	数据表
MBRF20100CT_08	KEC	获取价格	SCHOTTKY BARRIER TYPE DIODE
MBRF20100CT_15	DIODES	获取价格	20A SCHOTTKY BARRIER RECTIFIER
MBRF20100CT-4W	KERSEMI	获取价格	Trench MOS Schottky technology
MBRF20100CTD	DYELEC	获取价格	20 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBRF20100CT-E3	KERSEMI	获取价格	Trench MOS Schottky technology
MBRF20100CT-E3/45	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM),
MBRF20100CT-E3/4W	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF20100CT-E3-4W	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF20100CTG	ONSEMI	获取价格	SWITCHMODE Schottky Power Rectifier
MBRF20100CT-JT	DIODES	获取价格	20A SCHOTTKY BARRIER RECTIFIER

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