Datasheet > MBRF20100LCT

MBRF20100LCT

更新时间： 2024-11-19 14:54:03

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
4页	1755K
描述
肖特基二极管

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中文翻译

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数据手册

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MBRF20100LCT 数据手册

MBR20100LCT/MBRF20100LCT

MBR20100LDT/MB20100LMT

Low VF Trench Schottky Rectifiers

Reverse Voltage： 100Volts

Forward Current:20.0Amperes

Features

◇ Trench Schottky Barrier technology

◇ Ultra low forward voltage drop

◇ Low power loss,high efficiency

◇ Excellent low reverse leakages

◇ Excellent high temperature stability

◇ High current capability

◇ High forward surge capability

◇ Lead free finish ,Rohs and WEEE compliant.

Applications

◇ Switching diode

◇ Switching mode power suppluy(SMPS)

◇ DC/DC converter

◇ LED lighting

◇ Adapter for notebook and game station

Mechanical Data

◇ Moisture Sensitivity: MSL Level 1,per J-STD-020

◇ Terminals:Matte Tin Finish.

Solderable per MIL-STD-202 Method 208

◇ Case Material：Molded Plastic;

Molding compound meet UL Flammability ClassificationRating 94V-0

◇ Case:JEDEC TO-220AB,ITO-220AB,TO-252,TO-263

MAXIMUM RATING

Ratings at 25℃ ambient tepmerature unless otherwise specified.

PARAMETER

VALUE

UNITS

SYMBOL

V_RRM

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

V_RWS

Maximum DC blocking voltage

Maximum average forward rectified current

V_DC

100

per device

Per diode

I_F(AV)

Peak forward surge current 8.3ms half-sine-wave

I²t Rating for Fusing(t<8.3ms)

I_FSM

I²t

200

166

A²s

Typical Thermal Resistance

R_Θ

℃/W

2.5

3.0

TO-220AB

R_Θ

4.5

ITO-220AB

TO-252

R_Θ

2.5

R_Θ

2.5

TO-263

R_Θ

Typical junction capacitance: VR=4.0v,f=1MHz

Junction temperature

T_J

620

150

℃

Storage temperature range

-55~150

℃

TSTG

http://www.lgesemi.com

Revision:20210428-P1

mail:lge@lgesemi.com

12 3 4

中文翻译

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