Datasheet > MBRF20100CT-4W

MBRF20100CT-4W

更新时间： 2024-02-26 00:08:52

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
4页	1678K
描述
Trench MOS Schottky technology

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中文翻译

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数据手册

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MBRF20100CT-4W 数据手册

MBR(F,B)2090CT & MBR(F,B)20100CT

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

TO-220AB

ITO-220AB

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

MBR2090CT

MBR20100CT

PIN 1

MBRF2090CT

MBRF20100CT

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB and ITO-220AB

package)

PIN 2

CASE

PIN 1

PIN 2

PIN 3

TO-263AB

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MBRB2090CT

MBRB20100CT

PIN 1

MECHANICAL DATA

PIN 2

HEATSINK

Case: TO-220AB, ITO-220AB, TO-263AB

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

2 x 10 A

90 V, 100 V

150 A

E3 suffix meets JESD 201 class 1A whisker test

V_F

0.65 V

Polarity: As marked

T_Jmax.

150 °C

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR2090CT

MBR20100CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

100

total device

per diode

Maximum average forward rectified current at T_C= 133 °C

I_F(AV)

I_FSM

E_AS

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

150

130

0.5

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 min

V_AC

1500

www.kersemi.com

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