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MBR8150F PDF预览

MBR8150F

更新时间: 2024-09-17 11:11:39
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
2页 91K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR8150F 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AC包装说明:ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.57其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.9 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:150 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

MBR8150F 数据手册

 浏览型号MBR8150F的Datasheet PDF文件第2页 
MBR840F~MBR8200F  
SCHOTTKY BARRIER RECTIFIERS  
8 Amperes  
CURRENT  
VOLTAGE  
40 to 200 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: ITO-220AC plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.055 ounces, 1.5615 grams.  
MAXIMUM RATINGS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR840F MBR845F MBR850F MBR860F MBR880F MBR890F MBR8100F MBR8150F MBR8200F  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
8
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VRMS  
V
Maximum DC Blocking Voltage  
Maximum Average Forward (See Figure 1)  
VDC  
100  
V
IF(AV)  
A
A
Peak Forward Surge Current : 8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
IFSM  
150  
Maximum Forward Voltage at 8.0A  
VF  
0.70  
0.75  
0.80  
0.90  
V
Maximum DC Reverse Current TJ=25O  
C
0.05  
20  
IR  
mA  
O C / W  
O C  
at Rated DC Blocking Voltage TJ=100O  
C
Typical Thermal Resistance  
RθJC  
3
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-65 to +175  
NOTES : Both Bonding and Chip structure are available.  
STAD-APR.30.2009  
PAGE . 1  

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