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MBR350RLG

更新时间： 2024-09-14 04:41:07
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管瞄准线功效
页数 文件大小 规格书
4页 60K
描述
Axial Lead Rectifiers

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中文翻译

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MBR350RLG 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：DO-201AD包装说明：LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：2 weeks风险等级：0.46
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.6 V
JEDEC-95代码：DO-201ADJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：50 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBR350RLG 数据手册

 浏览型号MBR350RLG的Datasheet PDF文件第2页浏览型号MBR350RLG的Datasheet PDF文件第3页浏览型号MBR350RLG的Datasheet PDF文件第4页 
MBR350, MBR360  
MBR360 is a Preferred Device  
Axial Lead Rectifiers  
These devices employ the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlap  
contact. Ideally suited for use as rectifiers in low−voltage,  
high−frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
Features  
• Extremely Low v  
SCHOTTKY BARRIER  
RECTIFIERS  
F
• Low Power Loss/High Efficiency  
• Highly Stable Oxide Passivated Junction  
• Low Stored Charge, Majority Carrier Conduction  
• Pb−Free Packages are Available*  
3.0 AMPERES  
50, 60 VOLTS  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 1.1 Gram (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Polarity: Cathode indicated by Polarity Band  
AXIAL LEAD  
CASE 267−05  
(DO−201AD)  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
MARKING DIAGRAM  
V
RWM  
MBR350  
MBR360  
V
I
50  
60  
R
Average Rectified Forward Current T = 65°C  
3.0  
A
A
A
O
A
MBR  
3x0G  
G
(R  
q
= 28°C/W, P.C. Board Mounting)  
JA  
Non−Repetitive Peak Surge Current (Note 1)  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz, T = 75°C)  
I
FSM  
80  
L
Operating and Storage Junction Temperature  
Range (Reverse Voltage Applied)  
T , T  
−65 to  
+150  
°C  
J
stg  
A
x
G
= Assembly Location  
= 5 or 6  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction−to−Ambient  
(see Note 4 − Mounting Data, Mounting Method 3)  
R
q
JA  
28  
°C/W  
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
1. Lead Temperature reference is cathode lead 1/32 in from case.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 6  
MBR350/D  
 
1234

中文翻译

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MBR350RLG 替代型号

型号 品牌 替代类型 描述 数据表
SB350 ONSEMI

类似代替

 肖特基势垒整流器
SB350-E3/54 VISHAY

功能相似

 DIODE SCHOTTKY 50V 3A DO201AD
MBR350RL ONSEMI

功能相似

 Axial Lead Rectifiers

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