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MBR350TRPBF PDF预览

MBR350TRPBF

更新时间: 2024-09-14 13:11:11
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威世 - VISHAY 整流二极管
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MBR350TRPBF 数据手册

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VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 3 A  
FEATURES  
• Low profile, axial leaded outline  
• Very low forward voltage drop  
• High frequency operation  
Cathode  
Anode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
C-16  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-201AD (C-16)  
3 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
50 V, 60 V  
0.64 V  
DESCRIPTION  
VF at IF  
The VS-MBR350..., VS-MBR350 axial leaded Schottky  
rectifier has been optimized for very low forward voltage  
drop, with moderate leakage. Typical applications are in  
switching power supplies, converters, freewheeling diodes,  
and reverse battery protection.  
I
RM max.  
15 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
5.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
50/60  
tp = 5 μs sine  
460  
A
VF  
3 Apk, TJ = 25 °C  
0.73  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBR350  
VS-MBR350-M3  
VS-MBR360  
VS-MBR360-M3  
UNITS  
Maximum DC reverse voltage  
VR  
50  
50  
60  
60  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 50 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
3.0  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 µs sine or 3 µs rect. pulse  
460  
Followinganyratedload  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
80  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1 A, L = 10 mH  
5.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.0  
Revision: 13-Oct-11  
Document Number: 93450  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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