Datasheet > MBR35100R

MBR35100R

更新时间： 2024-09-14 12:26:27

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	124K
描述
Schottky Power Diode, 35A

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数据手册

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MBR35100R 数据手册

MBR3545 thru

MBR35100R

Naina Semiconductor Ltd.

Schottky Power Diode, 35A

Features

•

Fast Switching

Low forward voltage drop

High surge capability

High efficiency, low power loss

Normal and Reverse polarity

DO-203AA (DO-4)

Maximum Ratings (T_J= 25^oC, unless otherwise noted)

Test

Conditions

Parameter

Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit

Repetitive peak reverse voltage

RMS reverse voltage

V_RRM

V_RMS

V_DC

I_F

100

DC blocking voltage

100

Continuous forward current

T_C≤ 110^oC

T_C= 25^oC

Surge non-repetitive forward

current, half-sine wave

I_FSM

V_F

600

0.68

1.5

600

0.75

1.5

600

0.84

1.5

600

0.84

1.5

I_F= 35 A

T_J= 25^oC

Forward voltage

V_R= 20V,

T_J= 25^oC

Reverse current

I_R

V_R= 20V,

T_J= 125^oC

Thermal & Mechanical Specifications (T_J= 25^oC, unless otherwise noted)

Parameters

Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit

Maximum thermal resistance, junction to

case

^oC/

^oC

R_th(JC)

1.5

Operating junction temperature range

Storage temperature

T_J

T_stg

-55 to 150

-55 to 175

2.0

^oC

Mounting torque (non-lubricated threads)

Approximate allowable weight

5.0

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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