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MBR3520 PDF预览

MBR3520

更新时间: 2024-09-14 12:01:19
品牌 Logo 应用领域
NAINA 二极管
页数 文件大小 规格书
2页 123K
描述
Schottky Power Diode, 35A

MBR3520 数据手册

 浏览型号MBR3520的Datasheet PDF文件第2页 
MBR3520 thru  
MBR3540R  
Naina Semiconductor Ltd.  
Schottky Power Diode, 35A  
Features  
Fast Switching  
Low forward voltage drop  
High surge capability  
High efficiency, low power loss  
Normal and Reverse polarity  
DO-203AA (DO-4)  
Maximum Ratings (TJ = 25oC, unless otherwise noted)  
Test  
Conditions  
Parameter  
Symbol MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Units  
Repetitive peak reverse voltage  
RMS reverse voltage  
VRRM  
VRMS  
VDC  
IF  
20  
14  
20  
35  
30  
21  
30  
35  
35  
25  
35  
35  
40  
28  
40  
35  
V
V
V
A
DC blocking voltage  
Continuous forward current  
TC ≤ 110oC  
TC = 25oC  
Surge non-repetitive forward  
current, half-sine wave  
IFSM  
VF  
600  
0.68  
1.5  
600  
0.68  
1.5  
600  
0.68  
1.5  
600  
0.68  
1.5  
A
V
IF = 35 A  
TJ = 25oC  
Forward voltage  
VR = 20V,  
TJ = 25oC  
Reverse current  
IR  
mA  
VR = 20V,  
TJ = 125oC  
25  
25  
25  
25  
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)  
Parameters  
Symbol MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Units  
Maximum thermal resistance, junction to  
case  
Rth(JC)  
1.5  
oC/W  
Operating junction temperature range  
Storage temperature  
TJ  
Tstg  
F
-55 to 150  
-55 to 175  
2.0  
oC  
oC  
Mounting torque (non-lubricated threads)  
Approximate allowable weight  
Nm  
g
W
5.0  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
Fax: 0120-4273653  
sales@nainasemi.com  
www.nainasemi.com  

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