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MBR3510W PDF预览

MBR3510W

更新时间: 2024-09-14 17:01:43
品牌 Logo 应用领域
虹扬 - HY 局域网二极管
页数 文件大小 规格书
2页 31K
描述
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, MBRW, 4 PIN

MBR3510W 技术参数

生命周期:Contact Manufacturer包装说明:S-PUFM-W4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.73Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:S-PUFM-W4
最大非重复峰值正向电流:400 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:35 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:UPPER
Base Number Matches:1

MBR3510W 数据手册

 浏览型号MBR3510W的Datasheet PDF文件第2页 
MBR10/15/25/35/50A W SERIES  
REVERSE VOLTAGE  
FORWARD CURRENT - 10/15/25/35/50 Amperes  
- 50 to 1000Volts  
SILICON BRIDGE RECTIFIERS  
MBRW  
FEATURES  
METAL HEAT SINK  
Surge overload -240~500 amperes peak  
.335(8.5)  
.295(7.5)  
Low forward voltage drop  
Mounting position: Any  
Electrically isolated base -2000 Volts  
Materials used carries U/L recognition  
1.200  
(30.5)MIN  
.042(1.07)  
.038(0.97)  
Hole for  
No.8 screw  
193"(4.9)diam  
1.133(28.8)  
1.114(28.3)  
1.133(28.8)  
1.114(28.3)  
.732(18.6)  
.693(17.6)  
.469(11.9)  
.429(10.9)  
.732(18.6)  
.693(17.6)  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Resistive or inductive load 60HZ.  
For capacitive load current by 20%  
MBR-W MBR-W MBR-W MBR-W MBR-W MBR-W MBR-W  
10005  
15005  
25005  
35005  
50005  
50  
1001  
1501  
2501  
3501  
5001  
100  
1002  
1502  
2502  
3502  
5002  
200  
1004  
1504  
2504  
3504  
5004  
400  
1006  
1506  
2506  
3506  
5006  
600  
1008  
1508  
2508  
3508  
5008  
800  
1010  
1510  
2510  
3510  
5010  
1000  
700  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
V
V
Maximum RMS Bridge Input Voltage  
Maximum Average Forward  
35  
70  
140  
280  
420  
560  
I(AV)  
A
25  
35  
10  
50  
15  
Rectified Output Current at  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load  
Maximum Forward Voltage Drop  
@Tc=55℃  
MBR  
10W  
MBR  
15W  
MBR  
25W  
MBR  
35W  
MBR  
50W  
400  
500  
300  
400  
240  
IFSM  
A
VF  
IR  
1.1  
V
Per Element at 5.0/7.5/12.5/17./25.0 Peak  
Maximum Reverse Current at Rated  
10.0  
μA  
DC Blocking Voltage Per Element  
Operating Temperature Range  
@TJ=25℃  
-55 to +150  
-55 to +150  
TJ  
Storage Temperature Range  
TSTG  
REV. 1, 30-Dec-2011  
~ 456 ~  

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