Datasheet > MBR3100_06

MBR3100_06

更新时间： 2024-11-05 04:41:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
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4页	58K
描述
Axial Lead Rectifier

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中文翻译

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MBR3100_06 数据手册

MBR3100

Preferred Device

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

http://onsemi.com

Features

SCHOTTKY BARRIER

RECTIFIER

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard−ring for Stress Protection

• Low Forward Voltage

3.0 AMPERES, 100 VOLTS

• 175°C Operating Junction Temperature

• High Surge Capacity

AXIAL LEAD

CASE 267−05

(DO−201AD)

STYLE 1

• Pb−Free Packages are Available*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

MARKING DIAGRAM

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Cathode indicated by Polarity Band

MBR

3100

YYWWG

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

= Assembly Location

= Year

= Work Week

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RRM

RWM

= Pb−Free Package

Average Rectified Forward Current T = 100°C

3.0

(Note: Microdot may be in either location)

Note 3)

= 28°C/W, Refer to P.C. Board Mounting,

ORDERING INFORMATION

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

150

FSM

†

Device

Package

Shipping

MBR3100

Axial Lead

500 Units / Bag

Operating and Storage Junction Temperature

Range (Note 1) (Reverse Voltage Applied)

T , T

−65 to

+175

°C

stg

MBR3100G

Axial Lead

(Pb−Free)

500 Units / Bag

Voltage Rate of Change (Rated V )

dv/dt

V/ns

MBR3100RL

Axial Lead

1500/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MBR3100RLG

Axial Lead

(Pb−Free)

1. The heat generated must be less than the thermal conductivity from

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Junction−to−Ambient: dP /dT < 1/R .

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

June, 2006 − Rev. 6

MBR3100/D

12 3 4

中文翻译

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与MBR3100_06相关器件

型号	品牌	获取价格	描述	数据表
MBR3100DS	YFW	获取价格	Surface Mount Schottky Barrier Rectifier
MBR3100G	ONSEMI	获取价格	Axial Lead Rectifier
MBR3100G	ROCHESTER	获取价格	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
MBR3100-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, LEAD FR
MBR3100G-SMA-R	UTC	获取价格	High Surge Capability
MBR3100-GT3	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, LEAD FREE, PLASTIC P
MBR3100L-SMA-R	UTC	获取价格	High Surge Capability
MBR3100RL	ROCHESTER	获取价格	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC, CASE 267-05, 2 PIN
MBR3100RL	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon
MBR3100RL	ONSEMI	获取价格	SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS

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