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MBR3100RL

更新时间： 2024-11-05 20:29:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 功效二极管
页数 文件大小 规格书
4页 77K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon

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中文翻译

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MBR3100RL 技术参数

生命周期：Transferred包装说明：O-PALF-W2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.14
Is Samacsys：N其他特性：FREE WHEELING DIODE
应用：EFFICIENCY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.79 V
JESD-30 代码：O-PALF-W2JESD-609代码：e0
最大非重复峰值正向电流：150 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：3 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
认证状态：Not Qualified最大重复峰值反向电压：100 V
最大反向电流：600 µA表面贴装：NO
技术：SCHOTTKY端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

MBR3100RL 数据手册

 浏览型号MBR3100RL的Datasheet PDF文件第2页浏览型号MBR3100RL的Datasheet PDF文件第3页浏览型号MBR3100RL的Datasheet PDF文件第4页 
Order this document  
by MBR3100/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power  
diode. State–of–the–art geometry features epitaxial construction with oxide passiva-  
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,  
high–frequency inverters, free wheeling diodes, and polarity protection diodes.  
Motorola Preferred Device  
•
•
•
•
•
•
•
•
Low Reverse Current  
Low Stored Charge, Majority Carrier Conduction  
Low Power Loss/High Efficiency  
Highly Stable Oxide Passivated Junction  
Guard–Ring for Stress Protection  
Low Forward Voltage  
SCHOTTKY BARRIER  
RECTIFIER  
3.0 AMPERES  
100 VOLTS  
150°C Operating Junction Temperature  
High Surge Capacity  
Mechanical Characteristics:  
•
•
•
Case: Epoxy, Molded  
Weight: 1.1 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are  
Readily Solderable  
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for  
10 Seconds, 1/16″ from case  
•
•
Shipped in plastic bags, 5,000 per bag  
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part  
number  
CASE 267–03  
PLASTIC  
•
•
Polarity: Cathode indicated by Polarity Band  
Marking: B3100  
MAXIMUM RATINGS  
Rating  
Symbol  
MBR3100  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
100  
V
RRM  
RWM  
R
V
Average Rectified Forward Current, T = 100°C  
I
3.0  
150  
A
A
A
O
(R  
= 28°C/W, P.C. Board Mounting, see Note 1)  
θJA  
Non–Repetitive Peak Surge Current (Surge applied at rated load  
conditions, half wave, single phase, 60 Hz)  
I
FSM  
Operating and Storage Junction Temperature Range  
(Reverse Voltage applied)  
T , T  
65 to +150  
10  
°C  
J
stg  
Voltage Rate of Change (Rated V )  
R
dv/dt  
V/ns  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient  
(see Note 1, Mounting Method 3)  
R
28  
°C/W  
θJA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
L
Characteristic  
Symbol  
vF  
Max  
Unit  
Maximum Instantaneous Forward Voltage*  
(i = 3 Amps, T = 25°C)  
(i = 3 Amps, T = 100°C)  
V
0.79  
0.69  
F
F
L
L
Maximum Instantaneous Reverse Current @ Rated dc Voltage*  
(T = 25°C)  
(T = 100°C)  
L
i
R
mA  
0.6  
20  
L
*Pulse Test: Pulse Width = 300 µs, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1999  
1234

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