MBR3100RLG

更新时间： 2024-11-05 04:41:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	58K
描述
Axial Lead Rectifier

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中文翻译

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数据手册
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MBR3100RLG 数据手册

MBR3100

Preferred Device

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

http://onsemi.com

Features

SCHOTTKY BARRIER

RECTIFIER

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard−ring for Stress Protection

• Low Forward Voltage

3.0 AMPERES, 100 VOLTS

• 175°C Operating Junction Temperature

• High Surge Capacity

AXIAL LEAD

CASE 267−05

(DO−201AD)

STYLE 1

• Pb−Free Packages are Available*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

MARKING DIAGRAM

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Cathode indicated by Polarity Band

MBR

3100

YYWWG

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

= Assembly Location

= Year

= Work Week

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RRM

RWM

= Pb−Free Package

Average Rectified Forward Current T = 100°C

3.0

(Note: Microdot may be in either location)

Note 3)

= 28°C/W, Refer to P.C. Board Mounting,

ORDERING INFORMATION

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

150

FSM

†

Device

Package

Shipping

MBR3100

Axial Lead

500 Units / Bag

Operating and Storage Junction Temperature

Range (Note 1) (Reverse Voltage Applied)

T , T

−65 to

+175

°C

stg

MBR3100G

Axial Lead

(Pb−Free)

500 Units / Bag

Voltage Rate of Change (Rated V )

dv/dt

V/ns

MBR3100RL

Axial Lead

1500/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MBR3100RLG

Axial Lead

(Pb−Free)

1. The heat generated must be less than the thermal conductivity from

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Junction−to−Ambient: dP /dT < 1/R .

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

June, 2006 − Rev. 6

MBR3100/D

12 3 4

中文翻译

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MBR3100RLG 替代型号

型号	品牌	替代类型	描述	数据表
MBR3100RL	ONSEMI	完全替代	SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS
MBR3100G	ONSEMI	类似代替	Axial Lead Rectifier
MBR3100	ONSEMI	类似代替	SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS

与MBR3100RLG相关器件

型号	品牌	获取价格	描述	数据表
MBR3100-T3	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, PLASTIC PACKAGE-2
MBR3100VP-E1	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-27,
MBR3100VPTR-E1	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-27,
MBR3100VRTR-G1	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AC,
MBR310AFC	PANJIT	获取价格	SMAF-C
MBR310AFC-AU	PANJIT	获取价格	SMAF-C
MBR3150	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3150	UTC	获取价格	barrier rectifier
MBR3150DS	YFW	获取价格	Surface Mount Schottky Barrier Rectifier
MBR3150G-SMA-R	UTC	获取价格	RECTIFIER DIODE,

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