MBR320-MBR3100
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 3.0 A
Features
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!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
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High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
A
B
A
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Protection Applications
D
Mechanical Data
DO-201AD
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!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Dim
A
Min
25.40
7.20
1.20
4.80
Max
¾
B
9.50
1.30
5.30
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!
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C
D
All Dimensions in mm
Marking: Type Number
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol MBR320 MBR330 MBR340 MBR350 MBR360 MBR380 MBR3100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
50
35
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
@TL = 95°C
3.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
80
A
Forward Voltage
@IF = 3.0A
VFM
IRM
0.50
0.75
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
20
mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Cj
250
20
pF
RꢀJA
°C/W
°C
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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