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MBR30150CTR PDF预览

MBR30150CTR

更新时间： 2024-11-08 00:56:39
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THINKISEMI /
页数 文件大小 规格书
2页 308K
描述
30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

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MBR30150CTR 数据手册

 浏览型号MBR30150CTR的Datasheet PDF文件第2页 
MBR3035CTR thru MBR30200CTR  
®
MBR3035CTR thru MBR30200CTR  
Pb Free Plating Product  
30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Standard MBR matured technology with high reliablity  
Low forward voltage drop  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
.1(2.54)  
.1(2.54)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open type  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
Polarity: As marked on diode body  
Mounting position: Any  
method 208  
Case  
Case  
Case  
Case  
Doubler  
Series  
Negative  
Positive  
Weight: 2.0 gram approximately  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Suffix "CT"  
Suffix "CTR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
MBR MBR MBR MBR MBR MBR MBR MBR  
PARAMETER  
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT  
CTR  
35  
CTR  
45  
CTR  
50  
CTR  
60  
CTR  
90  
CTR  
100  
70  
CTR  
150  
105  
150  
CTR  
200  
140  
200  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
24  
31  
35  
42  
63  
Maximum DC blocking voltage  
35  
45  
50  
60  
90  
100  
Maximum average forward rectified current  
IF(AV)  
30  
30  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
IRRM  
200  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=15A, TJ=25℃  
0.70  
0.75  
0.84  
0.95  
IF=15A, TJ=125℃  
VF  
0.60  
0.82  
0.73  
0.65  
0.90  
0.78  
0.70  
0.94  
0.82  
0.80  
1.05  
0.92  
V
IF=30A, TJ=25℃  
IF=30A, TJ=125℃  
0.2  
Maximum reverse current @ rated VR TJ=25 ℃  
IR  
mA  
TJ=125 ℃  
20  
15  
10  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
1.5  
dV/dt  
RθJC  
TJ  
V/μs  
℃
/W  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
℃
TSTG  
℃
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  
12

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