Datasheet > MBR30150PT

MBR30150PT

更新时间： 2024-11-20 14:52:55

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	2376K
描述
肖特基二极管

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技术参数
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MBR30150PT 技术参数

Case Style：	TO-3P	IF（A）：	30
Maximum recurrent peak reverse voltage：	150	Peak forward surge current：	200
Maximum instantaneous forward voltage：	0.95	@IF(A)：	15
Maximum reverse current：	0.2	TJ(℃）：	/
class：	Diodes

MBR30150PT 数据手册

MBR3030PT-MBR30200PT

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 200 V

CURRENT: 30 A

Features

High surge capacity.

For use in low voltage, high frequency inverters, free

111 wheeling, and polarity protection applications.

TO-3P(TO-247AD)

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

15.8± 0.2

8.0± 0.2

5.0± 0.15

2.0± 0.15

φ3.6± 0.15

Mechanical Data

Case:JEDEC TO-3P,molded plastic body

2.4± 0.2

2.2± 0.15

1.2± 0.15

Terminals:Solderable per MIL-STD-750,

3.0± 0.1

Method 2026

Polarity: As marked

Position: Any

0.6± 0.1

5.4± 0.15

Weight: 0.223 ounce, 6.3 grams

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Ratings at 25

MBR

30150 30200

MBR

3030

MBR

3035

MBR

3040

MBR

3045

MBR

3050

MBR

3060 3080

MBR

Symbol

UNITS

Parameter

30100

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100 150 200

105 140

Maximum DC blocking voltage

100 150 200

Maximum average forw ard total device11111111

I_F(AV)

30.0

m rectified current @T_C= 125°C

Peak forw ard surge current 8.3ms single half

I_FSM

V_F

I_R

200

0.8

sine-w ave superimposed on rated load

voltage (Note1)

Maximum forward

0.85

0.7

0.92

(

15.0A,T_C=25

Maximum reverse current

at rated DC blocking voltage

@T_C=25

0.1

m A

K/W

@T_C=125

Maximum thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

R_θJC

T_J

2.0

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance f rom junction to case.

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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