Datasheet > MBR30150PT-BP-HF

MBR30150PT-BP-HF

更新时间： 2024-11-19 20:54:43

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	795K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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MBR30150PT-BP-HF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

MBR30150PT-BP-HF 数据手册

MBR30150PT

Features

• Halogen Free Available Upon Request By Adding Suffix "-HF"

• Multilayer Metal -Silicon Potential Structure.

• Low Power Loss, High Efficiency

• High Surge Capacity and High Current Capability

• Epoxy Meets UL 94 V-0 Flammability Rating

• Moisture Sensitivity Level 1

30 Amp

Schottky

Barrier Rectifier

150 Volts

• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates

Compliant. See Ordering Information)

• High Junction Temperature Capability

Maximum Ratings

• Operating Junction Temperature Range: -55⁰C to +175⁰C

• Storage Temperature Range: -55⁰C to +175⁰C

TO-247

• Typical Thermal Resistance: 0.5⁰C/W Junction to Case

Maximum

Maximum DC

Maximum

RMS

Voltage

MCC

Device

Recurrent

Peak Reverse

Voltage

Blocking

Voltage

Part Number

Marking

MBR30150PT MBR30150PT

150V

105V

150V

Electrical Characteristics @ 25°C Unless Otherwise Speciﬁed

Average Forward

Current

I_F(AV)

30A

T_C=125⁰C

Peak Forward Surge

Current

I_FSM

275A

8.3ms,Half Sine Wave

I_FM=15A;

T_J=25⁰C

0.87V(Max)

0.83V(Typ)

Instantaneous

Forward Voltage

V_F

I_FM=15A;

T_J=125⁰C

0.80V(Max)

DIMENSIONS

INCHES MM

MIN MAX MIN MAX

Maximum Reverse

Current at Rated DC

Blocking Voltage

0.01mA

1.5mA

T_J=25⁰C

DIM

NOTE

I_R

T_J=125⁰C

0.787 0.866 20.00 22.00

0.598 0.638 15.20 16.20

0.185 0.208 4.70 5.30

0.035 0.059 0.90 1.50

0.059 0.094 1.50 2.40

0.067 0.091 1.70 2.30

0.019 0.031 0.48 0.80

0.748 0.833 19.00 21.15

0.122 0.189 3.10 4.80

0.118 0.150 3.00 3.80

0.106 0.134 2.70 3.40

0.197 0.224 5.00 5.70

Note:1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7a.

Internal Structure:

PIN 1

PIN 3

PIN 2

CASE

Rev.3-1-01012019

1/3

MCCSEMI.COM

12 3

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