Datasheet > MBR30200CT

MBR30200CT

更新时间： 2024-11-08 02:57:47

品牌	Logo	应用领域
时科 - SHIKUES		IOT 二极管
页数	文件大小	规格书
3页	370K
描述
SCHOTTKY BARRIER RECTIFIERS

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中文翻译

获取价格

数据手册

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MBR30200CT 数据手册

MBR3040CT/TF THRU MBR30200CT/TF

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 40 to 200 V

Forward Current - 30 A

FEATURES

• High current capability

• Low forward voltage drop

• Low power loss, high efficiency

• High surge capability

• High temperature soldering guaranteed

• Mounting position: any

TO-220F

TO-220

Mechanical data

• Case: TO-220

• Approx. Weight: 1.9g ( 0.067oz)

• Case: TO-220F

• Approx. Weight: 2.1g ( 0.07oz)

• Terminals: Lead solderable per MIL-STD-202, Method 208

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified

MBR3040CT

MBR3045CT

MBR3060CT

MBR30100CT MBR30150CT MBR30200CT

TO-220

CHARACTERISTICS

Units

TO-220F

MBR3040CTF MBR3045CTF MBR3060CTF MBR30100CTF MBR30150CTF MBR30200CTF

Maximum Recurrent Peak Reverse Voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

31.5

100

150

105

150

200

140

200

Maximum DC Blocking Voltage

100

Per diode

Per device

Maximum Average Forward

Rectified Current

I_F(AV)

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

I_FSM

200

on Rated Load (JEDEC method)

Per diode

Max Instantaneous

Per diode

V_F

I_R

0.70

600

0.75

0.85

0.90

0.92

Forward Voltage at 15 A

T_a= 25°C

Maximum DC Reverse Current

at Rated DC Reverse Voltage

0.1

0.05

T_a=125°C

Typical Junction Capacitance^（1）

Typical Thermal Resistance^（2）

400

C_j

°C/W

°C

R_θJA

T_j

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

-55 ~ +175

T_stg

°C

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 10cmX10cmX1mm copper pad areas.

REV.08

1 of 3

12 3

中文翻译

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