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MBR30200CT-BP PDF预览

MBR30200CT-BP

更新时间: 2024-11-19 20:04:15
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
3页 365K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 200V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

MBR30200CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
其他特性:FREEWHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR30200CT-BP 数据手册

 浏览型号MBR30200CT-BP的Datasheet PDF文件第2页浏览型号MBR30200CT-BP的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
TM  
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20736 Marilla Street Chatsworth  
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MBR30200CT  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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Features  
Low Power Loss, High Efficiency  
Guardring for overvoltage protection  
Low forward voltage drop and High frequency operation  
30Amp Schottky  
Barrier Rectifier  
200Volts  
For use in high frequency inverters,free wheeling and polarity  
protection applications  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
TO-220AB  
B
Halogen free available upon request by adding suffix "-HF"  
C
S
Maximum Ratings and Electrical Characteristics  
F
Mounting Torgue: 5 in-lbs Maximum  
Q
( TC = 25oC unless otherwise noted )  
T
A
Parameter  
Symbol  
MBR30200CT  
Unit  
U
200  
200  
200  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
DC  
1
2
3
H
Volts  
Amps  
Amps  
Maximum DC blocking voltage  
Maximum average forward  
rectified current (See Fig. 1)  
Total device  
30  
15  
K
IF(AV)  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method) per leg  
200  
IFSM  
Peak repetitive reverse current per leg at tp = 2.0us, 1KHz  
IRRM  
1.0  
Amp  
V
L
J
Voltage rate of change (rated VR)  
dv/dt  
10,000  
V/us  
D
R
Maximum instantaneous forward voltage per leg (Note 5)  
at IF=15A, TC=25oC  
G
0.95  
0.75  
0.99  
0.86  
N
at IF=15A, TC=125oC  
VF  
Volt  
PIN 1  
PIN 3  
PIN 2  
CASE  
at IF=30A, TC=25oC  
at IF=30A, TC=125oC  
DIMENSIONS  
Maximum reverse current per TJ=25oC  
leg at working peak reverse  
INCHES  
MM  
0.1  
1.0  
1.7  
mA  
IR  
DIM  
MIN  
MAX  
MIN  
14.22  
9.65  
MAX  
NOTE  
TJ=125oC  
mA  
voltage  
A
B
C
.560  
.380  
.140  
.625  
.420  
.190  
15.88  
10.67  
4.82  
Typical thermal resistance per leg  
R
oC/W  
Volts  
oC  
θJC  
3.56  
4500 (Note 2)  
3500 (Note 3)  
1500 (Note 4)  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
RMS Isolation voltage (MBRF type only) from terminals  
VISOL  
30%  
to heatsink with t = 1.0 second, RH <  
G
H
J
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
.012  
0.30  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
2. Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset  
3. Clip mounting (on case), where leads do overlap heatsink  
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
4. Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19")  
5.Pulse test: 300us pulse width, 1% duty cycle  
.045  
1.15  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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