Datasheet > MBR30200CTS

MBR30200CTS

更新时间： 2024-11-20 15:18:43

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	230K
描述
TO-220AB

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中文翻译

获取价格

数据手册

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MBR30200CTS 数据手册

RoHS

MBR30100CTS THRU MBR30200CTS

Schottky Diodes

COMPLIANT

Features

● High frequency operation

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

Typical applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

Mechanical Data

●

ackage: TO-220AB

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

● Polarity: As marked

(T =25℃ Unless otherwise specified）

■

Maximum Ratings

MBR30100CTS

100

MBR30150CTS

150

MBR30200CTS

200

PARAMETER

SYMBOL UNIT

Device marking code

Repetitive Peak Reverse Voltage

RRM

Average Rectified Output Current @60Hz sine

wave, R-load, T =25℃

Surge(Non-repetitive)Forward Current @60H

FSM

I²t

230

222

half sine-wave, 1 cycle, T =25℃

A²s

Current Squared Time @1ms≤t<8.3ms Tj=25℃，

Storage Temperature

stg

℃

-55 ~ +175

Junction Temperature

（T =25℃Unless otherwise specified）

■Electrical Characteristics

MBR30100CTS

MBR30150CTS

MBR30200CTS

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

Maximum instantaneous

forward voltage drop per diode

=15.0A

0.86

0.9

0.1

0.95

RM RRM

RRM1

RRM2

Maximum DC reverse current

at rated DC blocking voltage per

diode

T =25℃

RM RRM

T =125℃

Note1:Pulse test:300uS pulse widh,1% duty cycle

Note2:Pulse test:pulse widh 40mS

1 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-B1333

Rev.1.1,02-Aug-23

12 3 4

中文翻译

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