MBR30100PT thru MBR30200PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-247AD
A
C
A
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
A
C
A
C(TAB)
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
A=Anode, C=Cathode, TAB=Cathode
5.4
6.2 0.212 0.244
VRRM
V
VRMS
V
VDC
V
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
MBR30100PT
MBR30150PT
MBR30200PT
100
150
200
70
100
150
200
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
105
140
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087 0.102
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=125oC
30
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
250
A
dv/dt
Voltage Rate Of Change (Rated VR)
IF=15A @TJ=25oC
Maximum Forward
Voltage (Note 1)
10000
V/us
0.85
0.70
0.98
0.85
IF=15A @TJ=125oC
IF=30A @TJ=25oC
IF=30A @TJ=125oC
VF
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.05
10
IR
mA
@TJ=125oC
2.2
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
700
-55 to +150
-55 to +150
TJ
TSTG
Storage Temperature Range
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications