Datasheet > MBR30200L-F-CT

MBR30200L-F-CT

更新时间： 2024-11-24 01:25:03

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海德 - HDSEMI		/
页数	文件大小	规格书
3页	1396K
描述
TO-220 Plastic-Encapsulate Diodes

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数据手册

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MBR30200L-F-CT 数据手册

MBR30200L(F)CT

HD TO100

TO-220 Plastic-Encapsulate Diodes

Schottky Rectifier

Features

●I

30A

ITO- 220AB

TO- 220AB

200V

●VRRM

●High surge current capability

●

Low Vf

Applications

●Rectifier

Marking

● MBR30200L(F)CT

PIN 1

PIN 3

PIN 2

CASE

Item

Symbol

Unit

Test Conditions

MBR30200L(F)CT

Repetitive Peak Reverse Voltage

Average Rectified Output Current

V_RRM

I_o

200

60HZ Half-sine wave, Resistance

load, Tc(Fig.1)

30.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

200

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

Item

Symbol

Unit

Test Condition

MBR30200L(F)CT

V_F

I_F=15.0A

0.9

Peak Forward Voltage

Peak Reverse Current

I_RRM1

I_RRM2

T =25℃

0.3

V_RM=V_RRM

T =125℃

1.5

2.0¹⁾

Thermal

Resistance(Typical)

Between junction and case

R_θ

℃/W

J-C

Notes:

Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate

igh Diode Semiconductor

12 3

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