MBR3020FCT thru MBR30200FCT
20 200
to
REVERSE VOLTAGE -
FORWARD CURRENT -
Volts
SCHOTTKY BARRIER RECTIFIERS
30.0
Amperes
IITTOO--222200AABB
FEATURES
Metal-Semiconductor junction with guard ring
EEppiittaaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : Color band denotes cathode
Weight : 1.689 grams
Mounting position : Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
̺
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
M BR M BR M BR M BR M BR
M BR
M BR
3020FCT 3040FCT 3050FCT 3060FCT 3080FCT 30100FCT 30150FCT 30200FCT
M BR
SYM BOL
PARAM ETER
UNIT
20
14
20
40
28
40
50
35
50
60
42
60
80
56
80
100
70
150
105
150
200
140
200
M aximum repetitivepeakreversevoltage
M aximum RM Svoltage
VRRM
VRM S
VDC
V
V
V
100
M aximum DC blockingvoltage
M aximum averageforward
30.0
IF
A
A
15.0
rectifiedcurrent
(Perleg)
Peakforwardsurgecurrent,8.3mssingle
halfsine-wavesuperim posedonratedload
200.0
IFSM
M aximum instantaneousI F=15A@ TA=25℃
@ TA=100℃
0.60
0.54
0.69
0.61
0.82
0.68
0.87
0.73
VF
V
M aximum DC ReverseCurrent@ TA=25℃
atRatedDC BlockingVoltage@ TA=100℃
0.2
20
IR
mA
700
550
420
330
TypicalJunctionCapacitance
TypicalThermalResistance
CJ
pF
RθJC
3
℃/W
-55to+150
-55to+175
OperatingTemperatureRange
StorageTemperatureRange
TJ
℃
℃
TSTG
1 of 2
MBR3020FCT thru MBR30200FCT