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MBR30150PT PDF预览

MBR30150PT

更新时间: 2024-11-19 04:41:07
品牌 Logo 应用领域
TSC 二极管局域网
页数 文件大小 规格书
2页 217K
描述
30.0 AMPS. Schottky Barrier Rectifiers

MBR30150PT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.33Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:150 V表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR30150PT 数据手册

 浏览型号MBR30150PT的Datasheet PDF文件第2页 
MBR3035PT - MBR30150PT  
30.0 AMPS. Schottky Barrier Rectifiers  
TO-3P/TO-247AD  
Features  
Plastic material used carries Underwriters  
Laboratory Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
o
260 C/10 seconds,0.17”(4.3mm)from case  
Mechanical Data  
Cases: JEDEC TO-3P/TO-247AD molded plastic  
body  
Dimensions in inches and (millimeters)  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
Polarity: As marked  
Mounting position: Any  
Mounting torque: 10 in. - lbs. max  
Weight: 0.2 ounce, 5.6 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR MBR MBR MBR MBR MBR MBR  
Symbol  
Type Number  
Units  
3035 3045 3050 3060 3090 30100 30150  
PT  
35  
24  
35  
PT  
45  
31  
45  
PT  
50  
35  
50  
PT  
60  
42  
60  
PT  
90  
63  
90  
PT  
PT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
100 150  
70 105  
100 150  
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
(SEE F1G. 1)  
30  
30  
A
A
I(AV)  
IFRM  
IFSM  
IRRM  
Peak Repetitive Forward Current (Rated V , Square Wave,  
R
o
20KHz) at Tc=105 C  
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave  
Superimposed on Rated Load (JEDEC method )  
200  
A
A
Peak Repetitive Reverse Surge Current (Note 2)  
2.0  
1.0  
Maximum Instantaneous Forward Voltage at (Note 1)  
o
I =15A, Tc=25 C  
F
0.75  
0.65  
0.85  
0.95  
0.92  
1.02  
0.98  
o
I =15A, Tc=125 C  
F
0.75  
0.60  
0.82  
0.72  
V
VF  
o
I =30A, Tc=25 C  
F
o
I =30A, Tc=125 C  
F
o
1.0  
0.5  
10  
mA  
mA  
Maximum Instantaneous Reverse Current  
@ Tc=25 C  
o
IR  
at Rated DC Blocking Voltage Per Leg(Note 2) @ Tc=125  
C
20  
15  
Voltage Rate of Change at (Rated V )  
R
10,000  
1,000  
V/uS  
dV/dt  
o
Maximum Thermal Resistance Per Leg(Note 3)  
1.4  
C/W  
R
θJC  
o
Operating Junction Temperature Range  
Storage Temperature Range  
-65 to +150  
-65 to +175  
TJ  
C
o
TSTG  
C
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to case Per Leg  
Version: A06  

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