Datasheet > MBR30150PT

MBR30150PT

更新时间： 2024-11-10 15:19:11

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	224K
描述
TO-3PTO-247AD

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中文翻译

获取价格

数据手册

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MBR30150PT 数据手册

RoHS

MBR30150PT

COMPLIANT

Schottky Diodes

Features

● High frequency operation

● Low forward voltage drop

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

Typical applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

Mechanical Data

●

ackage: TO-247AB

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

MBR30150PT

150

PARAMETER

SYMBOL

UNIT

Device marking code

V_RRM

I_O

Repetitive Peak Reverse Voltage

Average Rectified Output Current

@60Hz sine wave, R-load, Tc=150℃

Surge(Non-repetitive)Forward Current

I_FSM

250

260

@60Hz half sine-wave, 1 cycle, Ta=25℃

A²s

I²t

T_stg

Current Squared Time @1ms≤t≤8.3ms Tj=25℃

Storage Temperature

Junction Temperature

℃

-55 ~ +175

■Electrical Characteristics

Min

Typ

Max

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

_FM=15.0A

0.5

0.81

0.85

Tj=25℃

I_FM=15.0A

Peak Forward Voltage

V_FM

0.67

0.72

0.1

Tj=125℃

_RM=V_RRM

I_RRM1

I_RRM2

DC reverse current

at rated DC blocking voltage per

diode

Tj=25℃

V_RM=V_RRM

Tj=125℃

1MHz

Applied Reverse

Voltage of 4.0

V.D.C

and

Junction capacitance

150

310

550

Note1:Pulse test:300uS pulse widh,1% duty cycle

Note2:Pulse test:pulse widh 40mS

1 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-B2024

Rev.1.1,02-Aug-23

12 3 4

中文翻译

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