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MBR2545FCT-BP PDF预览

MBR2545FCT-BP

更新时间: 2024-09-15 13:11:11
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 100K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN

MBR2545FCT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.32
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR2545FCT-BP 数据手册

 浏览型号MBR2545FCT-BP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MBR2520  
THRU  
MBR25100  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
High surge capacity, High current capability  
25 Amp  
Schottky Barrier  
Rectifier  
20 to 100 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
TO-220AC  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
B
C
RMS  
DC  
S
F
Voltage  
Blocking  
Voltage  
Q
T
MBR2520 MBR2520  
MBR2530 MBR2530  
MBR2535 MBR2535  
MBR2540 MBR2540  
MBR2545 MBR2545  
MBR2560 MBR2560  
MBR2580 MBR2580  
14V  
21V  
24.5V  
28V  
31.5  
42V  
56V  
20V  
30V  
35V  
40V  
45V  
60V  
80V  
A
30V  
35V  
40V  
45V  
60V  
80V  
U
H
K
L
MBR25100 MBR25100  
100V  
70V  
100V  
D
J
R
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
25A  
TC = 130°C  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢇ ꢇ ꢇ ꢇ  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
INCHES  
MM  
ꢀꢁꢂ  
A
B
ꢂꢁꢄ  
ꢂꢈꢉ  
ꢂꢁꢄ  
15.11  
9.65  
ꢂꢈꢉ  
15.75  
10.29  
4.82  
ꢄꢆꢊꢃ  
.595  
.380  
.160  
.620  
.405  
.190  
C
4.06  
D
F
G
H
J
K
L
.025  
.142  
.190  
.110  
.018  
.500  
.045  
.035  
.147  
.210  
.130  
.025  
.562  
.060  
0.64  
3.61  
4.83  
2.79  
0.46  
12.70  
1.14  
0.89  
3.73  
5.33  
3.30  
0.64  
14.27  
1.52  
Maximum Forward  
Voltage Drop Per  
VF  
.63V  
IFM = 25A per  
element;  
TA = 25°C*  
MBR2020-2045  
MBR2060  
Element  
.75V  
.84V  
MBR2080-20100  
Q
.100  
.120  
2.54  
3.04  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
R
S
T
.080  
.045  
.235  
------  
.110  
.055  
.255  
.050  
2.04  
1.14  
5.97  
-----  
2.79  
1.39  
6.48  
1.27  
IR  
U
0.2mA TJ = 25°C  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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