Datasheet > MBR2550CT

MBR2550CT

更新时间： 2024-11-06 12:34:23

品牌	Logo	应用领域
科盛美 - KERSEMI		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	150K
描述
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

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MBR2550CT 数据手册

MBR2535CT THRU MBR2560CT

FEATURES

♦ Plastic package has Underwriters Laboratory

TO-220AB

Flammability Classifications 94V-0

♦ Dual rectifier construction, positive center-tap

0.185 (4.70)

0.415 (10.54) MAX.

0.175 (4.44)

0.370 (9.40)

0.360 (9.14)

♦ Metal silicon junction,

majority carrier conduction

♦ Low power loss,

0.154 (3.91)

0.055 (1.39)

DIA.

0.148 (3.74)

0.045 (1.14)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

high efficiency

♦ High current capability, low forward voltage drop

♦ High surge capability

0.135 (3.43)

0.560 (14.22)

0.530 (13.46)

0.410 (10.41)

0.390 (9.91)

0.350 (8.89)

0.635 (16.13)

0.330 (8.38)

0.625 (15.87)

♦ For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

♦ Guardring for overvoltage protection

1.148 (29.16)

1.118 (28.40)

0.110 (2.79)

0.100 (2.54)

160 (4.06)

140 (3.56)

♦ High temperature soldering guaranteed:

250°C/10 seconds, 0.25" (6.35mm) from case

0.560 (14.22)

0.530 (13.46)

MECHANICAL DATA

Case: JEDEC TO-220AB molded plastic body

Terminals: Lead solderable per MIL-STD-750,

Method 2026

0.105 (2.67)

0.095 (2.41)

0.037 (0.94)

0.027 (0.68)

0.022 (0.56)

0.014 (0.35)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

PIN 2

PIN 1

PIN 3

Polarity: As marked

CASE

Mounting Position: Any Mounting Torque: 5 in. - lbs. max.

Weight: 0.08 ounce, 2.24 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS MBR2535CT

MBR2545CT MBR2550CT

MBR2560CT

UNITS

Volts

Amps

Maximum repetitive peak reverse voltage

Maximum working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

Maximum average forward rectified current at T_C=130°C

I_(AV)

30.0

Peak repetitive forward current per leg at T_C=130°C

(rated V_R, square wave, 20 KH_Z)

I_FRM

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

I_RRM

150.0

Amps

Peak repetitive reverse surge current _{(NOTE 1)}

1.0

0.5

Maximum instantaneous forward voltage I_F=15.0A,T_C=25°C

0.75

per leg at: _{(NOTE 2)}

I_F=15.0A,T_C=25°C

I_F= 30A, T_C=25°C

I_F= 30A, T_C=125°C

0.65

V_F

Volts

0.82

0.73

Maximum instantaneous reverse current at

rated DC blocking voltage per leg _{(NOTE 2)}

T_C=25°C

I_R

0.2

1.0

T_C=125°C

40.0

50.0

Maximum thermal resistance _{(NOTE 3)}

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

R_ΘJC

dv/dt

T_J

1.5

°C/W

V/µs

°C

10,000

-65 to +150

-65 to +175

T_STG

°C

NOTES:

(1) 2.0µs pulse width, f=1.0 KH_Z

(2) Pulse test: 300µs pulse width, 1% duty cycle

(3) Thermal resistance from junction to case per leg

www.kersemi.com

4/98

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与MBR2550CT相关器件

型号	品牌	获取价格	描述	数据表
MBR2550CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 15A, 50V V(RRM)
MBR2550CT45-E3	VISHAY	获取价格	DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, Rectifier Diode
MBR2550CT-E3/45	VISHAY	获取价格	DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBR2550CT-HE3/45	VISHAY	获取价格	DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBR2550FCT	MCC	获取价格	30 Amp Schottky Barrier Rectifier 35 to 60 Volts
MBR2550FCT	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR2550FCT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 50V V(RRM), Silicon, TO-220AB, ROHS CO
MBR2550FCT-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220
MBR256	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
MBR2560	MCC	获取价格	25 Amp Schottky Barrier Rectifier 20 to 100 Volts

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