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MBR2560CT

更新时间： 2024-09-15 22:51:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管局域网
页数 文件大小 规格书
3页 38K
描述
30 Ampere Schottky Barrier Rectifiers

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中文翻译

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MBR2560CT 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
MBR2535CT - MBR2560CT  
0.185(4.70)  
0.175(4.44)  
Features  
0.412(10.5)  
MAX  
0.055(1.40)  
0.045(1.14)  
0.154(3.91)  
0.148(3.74)  
• Low power loss, high efficiency.  
• High surge capacity.  
0.113(2.87)  
0.103(2.62)  
0.27(6.86)  
0.23(5.84)  
• For use in low voltage, high frequency  
inverters, free wheeling, and polarity  
protection applications.  
0.594(15.1)  
0.587(14.9)  
TO-220AB  
• Metal silicon junction, majority carrier  
conduction.  
2
1
3
0.16(4.06)  
0.14(3.56)  
0.11(2.79)  
0.10(2.54)  
PIN 1  
• High current capacity, low forward  
voltage drop.  
+
0.56(14.22)  
0.53(13.46)  
CASE  
PIN 2  
PIN 3  
• Guard ring for over voltage protection.  
0.037(0.94)  
0.027(0.68)  
0.025(0.64)  
0.014(0.35)  
0.105(2.67)  
0.095(2.41)  
30 Ampere Schottky Barrier Rectifiers  
Dimensions are in: inches (mm)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
if(repetitive)  
if(surge)  
Average Rectified Current  
.375 " lead length @ TA = 130°C  
Peak Repetitive Forward Current  
(Rated VR , Square Wave, 20 KHz) @ TA = 130°C  
Peak Forward Surge Current  
30  
A
30  
A
A
8.3 ms single half-sine-wave  
150  
Superimposed on rated load (JEDEC method)  
PD  
Total Device Dissipation  
2.0  
W
16.6  
60  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
mW/°C  
°C/W  
RθJA  
RθJL  
Tstg  
TJ  
Thermal Resistance, Junction to Lead  
Storage Temperature Range  
1.5  
°C/W  
°C  
-65 to +175  
-65 to +150  
Operating Junction Temperature  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
2535CT  
35  
2545CT  
45  
2550CT  
50  
2560CT  
60  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
V
V
24  
31  
35  
42  
35  
45  
50  
60  
V
DC Reverse Voltage  
(Rated VR)  
10,000  
V/uS  
Voltage Rate of Change (Rated VR)  
Maximum Reverse Current  
0.2  
40  
1.0  
50  
mA  
mA  
@ rated VR  
TA = 25°C  
TA = 125°C  
Maximum Forward Voltage  
IF = 15 A, TC = 25°C  
-
-
0.75  
0.65  
-
-
V
V
V
V
IF = 15 A, TC = 125°C  
IF = 30 A, TC = 25°C  
IF = 30 A, TC = 125°C  
Peak Repetitive Reverse Surge  
Current  
0.82  
0.73  
1.0  
0.5  
A
2.0 us Pulse Width, f = 1.0 KHz  
MBR2535CT - MBR2560CT, Rev. A  
1999 Fairchild Semiconductor Corporation  
123

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