MBR2560

更新时间： 2024-11-08 22:51:31

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	100K
描述
25 Amp Schottky Barrier Rectifier 20 to 100 Volts

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中文翻译

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数据手册

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MBR2560 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MBR2520

THRU

MBR25100

Features

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

High surge capacity, High current capability

25 Amp

Schottky Barrier

Rectifier

20 to 100 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

TO-220AC

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

20V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MBR2520 MBR2520

MBR2530 MBR2530

MBR2535 MBR2535

MBR2540 MBR2540

MBR2545 MBR2545

MBR2560 MBR2560

MBR2580 MBR2580

14V

21V

24.5V

28V

31.5

42V

56V

20V

30V

35V

40V

45V

60V

80V

30V

35V

40V

45V

60V

80V

MBR25100 MBR25100

100V

70V

100V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

25A

T_C= 130°C

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

ꢇ ꢇ ꢇ ꢇ

Peak Forward Surge

Current

I_FSM

150A

8.3ms, half sine

INCHES

ꢀꢁꢂ

ꢂꢁꢄ

ꢂꢈꢉ

ꢂꢁꢄ

15.11

9.65

ꢂꢈꢉ

15.75

10.29

4.82

ꢄꢆꢊꢃ

.595

.380

.160

.620

.405

.190

4.06

.025

.142

.190

.110

.018

.500

.045

.035

.147

.210

.130

.025

.562

.060

0.64

3.61

4.83

2.79

0.46

12.70

1.14

0.89

3.73

5.33

3.30

0.64

14.27

1.52

Maximum Forward

Voltage Drop Per

V_F

.63V

I_FM= 25A per

element;

T_A= 25°C*

MBR2020-2045

MBR2060

Element

.75V

.84V

MBR2080-20100

.100

.120

2.54

3.04

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.080

.045

.235

------

.110

.055

.255

.050

2.04

1.14

5.97

-----

2.79

1.39

6.48

1.27

I^R

0.2mA T_J= 25°C

*Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

中文翻译

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