Datasheet > MBR2560CT

MBR2560CT

更新时间： 2024-09-15 22:51:31

品牌	Logo	应用领域
美台 - DIODES		二极管局域网
页数	文件大小	规格书
2页	68K
描述
30A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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MBR2560CT 数据手册

MBR2535CT - MBR2560CT

30A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AB

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Plastic Material: UL Flammability

Classification Rating 94V-0

Dim

Min

14.22

9.65

2.54

5.84

Max

15.88

10.67

3.43

6.86

6.35

12.70

2.29

0.51

14.73

2.79

1.14

Mechanical Data

3.53Æ 4.09Æ

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 2.24 grams (approx.)

Mounting Position: Any

3.56

1.14

0.30

2.03

4.83

1.40

0.64

2.92

Pin 1 +

Pin 2 -

Pin 3 +

Case

All Dimensions in mm

Marking: Type Number

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit

V_RRM

V_RWM

V_R

V_R(RMS)

I_O

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@ T_C= 130°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

I_RRM

150

Peak Repetitive Reverse Surge Current (Note 3)

1.0

0.5

Forward Voltage Drop

@ I_F= 15.0A, T_C

@ I_F= 15.0A, T_C= 125°C

@ I_F= 30.0A, T_C25°C

@ I_F= 30.0A, T_C= 125°C

= 25°C

0.75

0.65

V_FM

0.82

0.73

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C25°C

0.2

1.0

I_RM

@ T_C= 125°C

C_j

Typical Junction Capacitance (Note 2)

750

500

°C/W

°C

R_qJC

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

1.5

T_j,T_STG

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

3. 2.0ms pulse width, f = 1.0KHz.

DS31036 Rev. D-2

1 of 2

MBR2535CT - MBR2560CT

中文翻译

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与MBR2560CT相关器件

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MBR2560CT/45-E3	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR2560CT-1-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-262AA, GREEN, PLASTIC, TO-
MBR2560CT45-E3	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, Rectifier Diode
MBR2560CT-B	MCC	获取价格	Rectifier Diode,
MBR2560CT-BP-HF	MCC	获取价格	暂无描述
MBR2560CTC0	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR2560CTC0G	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR2560CTE3	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 60V V(RRM), Silicon, TO-220AB, PLASTIC
MBR2560CT-E3	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR2560CT-E3/4W	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect

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