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MBR1050CA PDF预览

MBR1050CA

更新时间: 2024-11-24 00:57:27
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THINKISEMI /
页数 文件大小 规格书
2页 747K
描述
10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes

MBR1050CA 数据手册

 浏览型号MBR1050CA的Datasheet PDF文件第2页 
MBR1035CA thru MBR10200CA  
®
CREAT BY ART  
MBR1035CA thru MBR10200CA  
Pb Free Plating Product  
10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
—
Plastic material used carriers Underwriters  
Laboratory Classification 94V-0  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
—
—
—
—
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
—
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
—
—
Guard-ring for overvoltage protection  
High temperature soldering guaranteed:  
260/10 seconds, 0.25"(6.35mm) from case  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
.1(2.54)  
.1(2.54)  
Mechanical Data  
—
Cases: JEDEC TO-220AB molded plastic body  
—
Terminals: Pure tin plated, lead free, solderable  
per MIL-STD-750, Method 2026  
—
—
—
—
Polarity: As marked  
Case  
Case  
Mounting position:Any  
Negative  
Common Anode  
Suffix "CA"  
Positive  
Mounting torque: 5 in. - lbs, max  
Weight: 2.0 gram approximately  
Common Cathode  
Suffix "CT"  
Maximum Ratings and Electrical Characteristics  
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR MBR MBR MBR MBR MBR MBR MBR  
Symbol 1035 1045 1050 1060 1090 10100 10150 10200 Units  
Type Number  
CA  
CA  
CA  
CA  
CA  
CA  
CA  
CA  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
35  
45  
50  
60  
90  
100  
150  
200  
V
V
V
24  
35  
31  
45  
35  
50  
42  
60  
63  
90  
70  
105  
150  
140  
200  
Maximum DC Blocking Voltage  
100  
IF(AV)  
Maximum Average Forward Rectified Current  
10  
10  
A
A
Peak Repetitive Forward Current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
Peak Forward Surge Current, 8.3 ms Single Half Sine-  
wave Superimposed on Rated Load (JEDEC method)  
IFSM  
IRRM  
120  
A
A
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
Maximum Instantaneous Forward Voltage at (Note 2)  
IF=5A, TA=25  
0.70  
0.57  
0.80  
0.67  
0.80  
0.65  
0.90  
0.75  
0.85  
0.75  
0.95  
0.85  
0.88  
0.78  
0.98  
0.88  
IF=5A, TA=125℃  
VF  
V
IF=10A, TA=25℃  
IF=10A, TA=125℃  
0.1  
Maximum Instantaneous Reverse Current @ T A=25 ℃  
mA  
mA  
IR  
at Rated DC Blocking Voltage  
@ T A=125 ℃  
15  
10  
2
5
Voltage Rate of Change (Rated VR)  
Maximum Typical Thermal Resistance  
Operating Junction Temperature Range  
Storage Temperature Range  
10,000  
1.5  
dV/dt  
RθJC  
TJ  
V/us  
/W  
- 65 to + 150  
- 65 to + 175  
TSTG  
Note 1: 2.0uS Pulse Width, f=1.0KHz  
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  

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