MBR1050CT

更新时间： 2024-11-26 12:21:07

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管瞄准线功效局域网
页数	文件大小	规格书
2页	207K
描述
10.0AMP. Schottky Barrier Rectifiers

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中文翻译

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技术参数
数据手册

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MBR1050CT 技术参数

Case Style：	TO-220AB	IF（A）：	10
Maximum recurrent peak reverse voltage：	50	Peak forward surge current：	125
Maximum instantaneous forward voltage：	0.80	@IF(A)：	5.0
Maximum reverse current：	0.1	TJ(℃）：	/
class：	Diodes

MBR1050CT 数据手册

MBR1035CT-MBR10200CT

10.0AMP. Schottky Barrier Rectifiers

TO-220AB

Features

ꢀ

Plastic material used carries Underwriters

Laboratory Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

ꢀ

High temperature soldering guaranteed:

260^oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

ꢀ

Cases: JEDEC TO-220AB molded plastic body

Polarity: As marked

Dimensions in inches and (millimeters)

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR MBR MBR MBR MBR MBR MBR MBR

1035 1045 1050 1060 1090 10100 10150 10200

Type Number

Symbol

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

I_(AV)

I_FRM

I_FSM

I_RRM

45 50 60 90 100 150 200

31 35 42 63 70 105 140

45 50 60 90 100 150 200

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at Tc=125^OC

Peak Repetitive Forward Current (Rated V_R,

Square Wave, 20KHz) at Tc=125^oC

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load

(JEDEC method )

Peak Repetitive Reverse Surge Current (Note 1)

Maximum Instantaneous Forward Voltage at:

120

1.0

0.5

0.88

0.78

0.98

0.88

(Note 2)

I_F=5A, T_C=25^oC

I_F=5A, T_C=125^oC

I_F=10A, T_C=25^oC

I_F=10A, T_C=125^oC

0.70

0.80

0.85

0.75

0.95

0.85

V_F

0.57

0.80

0.67

0.65

0.90

0.75

Maximum Instantaneous Reverse Current

@ Tc =25 ^oC at Rated DC Blocking Voltage

I_R

0.1

@ Tc=125 ^oC

(Note 2)

2.0

Voltage Rate of Change (Rated V_R)

dV/dt

10,000

1.5

V/uS

^oC/W

Maximum Typical Thermal Resistance (Note 3)

θJC

T_J

T_STG

-65 to +150

-65 to +175

^oC

Operating Junction Temperature Range

Storage Temperature Range

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

Notes:

3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in

Al-Plate.

- 108 -

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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与MBR1050CT相关器件

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