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MBR1050F PDF预览

MBR1050F

更新时间: 2024-11-26 11:12:07
品牌 Logo 应用领域
强茂 - PANJIT 肖特基二极管
页数 文件大小 规格书
2页 92K
描述
10 AMPERES SCHOTTKY BARRIER RECTIFIERS

MBR1050F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AC
包装说明:ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR1050F 数据手册

 浏览型号MBR1050F的Datasheet PDF文件第2页 
MBR1040F~MBR10200F  
10 AMPERES SCHOTTKY BARRIER RECTIFIERS  
VOLTAGE  
10 Amperes  
40 to 200 Volts  
CURRENT  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
• High current capability  
• Guardring for overvlotage protection  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: ITO-220AC molded plastic  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.055 ounces, 1.5615 grams.  
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR1040F MBR1045F MBR1050F MBR1060F MBR1080F MBR1090F MBR10100F MBR10150F MBR10200F  
PARAMETER  
SYMBOL  
VR R M  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VR M S  
V
V
A
Maximum DC Blocking Voltage  
V
DC  
100  
Maximum Average Forward Current (See  
fig.1)  
I
F(AV)  
10  
Peak Forward Surge Current :8.3ms single  
half sine-wave superimposed on rated  
load(JEDEC method)  
I
FSM  
150  
A
V
Maximum Forward Voltage at 10A, per leg  
V
F
0.7  
0.75  
0.8  
0.9  
Maximum DC Reverse Current TJ=25 OC  
0.05  
20  
I
R
mA  
at Rated DC Blocking Voltage TJ=125O  
Typical Thermal Resistance  
C
O C  
W
/
RθJC  
3.0  
Operating and Storage Junction  
Temperature Range  
O C  
-55 to  
+ 150  
T
J
,TSTG  
-65 to + 175  
Notes :  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-APR.30.2009  

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