Datasheet > MBR1050H

MBR1050H

更新时间： 2024-09-27 07:08:11

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ASEMI		高压
页数	文件大小	规格书
3页	185K
描述
Dual High-Voltage Schottky Rectifiers

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数据手册

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MBR1050H 数据手册

MBR1040 THUR MBR1050

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 40V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 10A

VRRM= 45V

IF(AV)= 10A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

VRRM= 50V

IF(AV)= 10A

● Low Voltage Continued Circuit and Protection Circuit.

■ MBR1040、MBR1045、MBR1050 Schottky diode,in the

manufacture uses the main process technology includes:

Silicon epitaxial substrate, P+ loop technology,The potential

metal and the silicon alloy technology, the device uses the

two chip, the common cathode, the plastic half package

structure.

Polarity

Absolute Maximum Ratings

Item

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

MBR1050

Symbol MBR1040 MBR1045

Unit

VRRM

VDC

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Representat

ive

Test Condition

Item

Minimum

MBR1040 MBR1045 MBR1050Unit

200

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=5A

0.69

0.72

0.67

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