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MBR1060 PDF预览

MBR1060

更新时间： 2024-11-24 12:27:03
品牌 Logo 应用领域
星合电子 - GXELECTRONICS /
页数 文件大小 规格书
2页 332K
描述
Voltage Range 35 to 200 Volts Current 10.0 Amperes

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MBR1060 数据手册

 浏览型号MBR1060的Datasheet PDF文件第2页 
MBR1035 THRU MBR10200  
星合 子  
XINGHE ELECTRONICS  
Voltage Range  
35 to 200 Volts  
10.0 Amperes  
Current  
TO-220A  
Features  
.185(4.70)  
.175(4.44)  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
.055(1.40)  
.045(1.14)  
.412(10.5)  
MAX  
DIA  
.154(3.91)  
.148(3.74)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
.113(2.87)  
.103(2.62)  
.27(6.86)  
.23(5.84)  
.594(15.1)  
.587(14.9)  
PIN1  
2
ꢀ
ꢀ
.16(4.06)  
.14(3.56)  
High temperature soldering guaranteed:  
.11(2.79)  
.10(2.54)  
260oC/10 seconds,0.25”(6.35mm)from case  
.56(14.22)  
.53(13.46)  
.037(0.94)  
.027(0.68)  
Mechanical Data  
ꢀ
Cases: JEDEC TO-220A molded plastic body  
Terminals: Lead solderable per MIL-STD-750, Method  
2026  
.025(0.64)  
.014(0.35)  
ꢀ
.205(5.20)  
.195(4.95)  
ꢀ
ꢀ
ꢀ
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
ꢀ
Weight: 0.08 ounce, 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25℃ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR MBR MBR MBR MBR MBR MBR  
1035 1045 1050 1060 1090 10150 10200  
Symbol  
Type Number  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
35  
24  
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
150  
105  
150  
200  
VRRM  
VRMS  
VDC  
140  
Maximum DC Blocking Voltage  
200  
Maximum Average Forward Rectified Current  
See Fig. 1  
A
A
A
10  
I(AV)  
IFRM  
IFSM  
Peak Repetitive Forward Current (Square Wave,  
20KHz) at Tc=135oC  
20.0  
150  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
Peak Repetitive Reverse Surge Current (Note 1)  
A
1.0  
0.5  
IRRM  
dV/dt  
Voltage Rate of Change (Rated VR)  
V/uS  
10,000  
Maximum Instantaneous Forward Voltage at  
(Note 2)  
IF=10A, Tc=25OC  
IF=10A, Tc=125OC  
IF=20A, Tc=25OC  
IF=20A, Tc=125OC  
0.70  
0.57  
0.84  
0.72  
0.80  
0.70  
0.95  
0.85  
0.85  
0.71  
1.05  
-
-
VF  
V
-
-
Maximum Instantaneous Reverse Current  
@ Tc =25℃at Rated DC Blocking Voltage (Note 2)  
@ Tc=125℃  
0.1  
15.0  
0.1  
6.0  
0.009  
10  
mA  
mA  
IR  
Typical Junction Capacitance (Note 3)  
350  
280  
200  
2.0  
pF  
℃/W  
℃
Cj  
RθJC  
TJ  
Maximum Thermal Resistance, Junction to Case  
Operating Junction Temperature Range  
Storage Temperature Range  
3.5  
-65 to +150  
-65 to +175  
℃
TSTG  
Notes: 1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  
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