Zibo Seno Electronic Engineering Co., Ltd.
MBR1040CG-MBR10200CG
10.0A SCHOTTKY BARRIER DIODE
Features
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
TO-263/D2 PAK
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Plastic Case Material has UL Flammability
Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Mechanical Data
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Case: TO-263/D2 PAK, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
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Polarity: See Diagram
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
1040CG
MBR
1050CG 1060CG
MBR
MBR
MBR
1045CG
MBR
MBR
MBR
Characteristic
Symbol
Units
1080CG 10100CG 10150CG 10200CG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
28
45
31
50
35
60
80
56
100
70
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
42
V
A
Average Rectified Output Current @TL =75°C
(Note 1)
10.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
100
FSM
I
110
A
0.80
280
0.85
0.92
V
Forward Voltage
@IF = 5A
V
FM
0.70
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.1
20
IRM
mA
350
200
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
C
j
15
Rꢀ
JA
Tj, TSTG
-55 to +150
-55 to +175
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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