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MBR1060/45 PDF预览

MBR1060/45

更新时间: 2024-11-20 19:51:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 70K
描述
Rectifier Diode, Schottky, 1 Element, 10A, 60V V(RRM),

MBR1060/45 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 V最大非重复峰值正向电流:150 A
元件数量:1最高工作温度:150 °C
最大输出电流:10 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKYBase Number Matches:1

MBR1060/45 数据手册

 浏览型号MBR1060/45的Datasheet PDF文件第2页 
MBR1035 THRU MBR1060  
SCHOTTKY RECTIFIER  
Reverse Voltage - 35 to 60 Volts  
Forward Current - 10.0 Amperes  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classifications 94V-0  
TO-220AC  
0.185 (4.70)  
0.175 (4.44)  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability,  
low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
250°C/10 seconds, 0.25" (6.35mm) from case  
0.415 (10.54) MAX.  
0.154 (3.91)  
0.148 (3.74)  
0.055 (1.27)  
0.045 (1.14)  
DIA.  
0.113 (2.87)  
0.103 (2.62)  
0.145 (3.68)  
0.135 (3.43)  
0.560 (14.22)  
0.530 (13.46)  
0.410 (10.41)  
0.390 (9.91)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
1.148 (29.16)  
1.118 (28.40)  
PIN  
1
2
0.110 (2.79)  
0.100 (2.54)  
0.160 (4.06)  
0.140 (3.56)  
0.560 (14.22)  
0.530 (13.46)  
0.105 (2.67)  
0.095 (2.41)  
MECHANICAL DATA  
Case: JEDEC TO-220AC molded plastic body  
Terminals: Leads solderable per MIL-STD-750,  
Method 2026  
0.037 (0.94)  
0.027 (0.68)  
0.016 (0.41)  
0.014 (0.35)  
0.205 (5.20)  
0.195 (4.95)  
PIN 2  
PIN 1  
PIN 3  
CASE  
Polarity: As marked  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Mounting Torque: 5 in. - lbs. max.  
Weight: 0.08 ounces, 1.81 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VRRM  
VRWM  
VDC  
MBR1035  
35  
MBR1045  
45  
MBR1050  
50  
MBR1060  
60  
UNITS  
Volts  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
35  
45  
50  
60  
35  
45  
50  
60  
Maximum average forward rectified current  
(SEE FIG. 1)  
I(AV)  
IFRM  
10.0  
20.0  
Amps  
Amps  
Peak repetitive forward current at TC=135°C  
(square wave 20 KHZ)  
Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
150.0  
Amps  
Peak repetitive reverse surge current (NOTE 1)  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
1.0  
0.5  
Amps  
10,000  
Vµs  
Maximum instantaneous  
forward voltage at (NOTE 2) IF=10A, TC=125°C  
IF=20A, TC=25°C  
IF=10A, TC=25°C  
-
0.80  
0.70  
0.95  
0.85  
0.57  
0.84  
0.72  
Volts  
VF  
IF=20A, TC=125°C  
Maximum instantaneous reverse current at rated  
DC blocking voltage  
TC= 25°C  
(NOTE 2) TC=125°C  
IR  
0.10  
15.0  
mA  
Maximum thermal resistance, junction to case  
Operating junction temperature range  
Storage temperature range  
RΘJC  
TJ  
2.0  
°C/W  
°C  
-65 to +150  
-65 to +175  
TSTG  
°C  
NOTES:  
(1) 2.0µs pulse width, f=1.0 KHZ  
(2) Pulse test: 300µs pulse width, 1% duty cycle  

MBR1060/45 替代型号

型号 品牌 替代类型 描述 数据表
MBR1060-E3/45 VISHAY

完全替代

DIODE 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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