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MBR1060-E3/45 PDF预览

MBR1060-E3/45

更新时间: 2024-11-24 21:11:43
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线测试二极管
页数 文件大小 规格书
5页 145K
描述
DIODE 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

MBR1060-E3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V最大反向电流:100 µA
反向测试电压:60 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR1060-E3/45 数据手册

 浏览型号MBR1060-E3/45的Datasheet PDF文件第2页浏览型号MBR1060-E3/45的Datasheet PDF文件第3页浏览型号MBR1060-E3/45的Datasheet PDF文件第4页浏览型号MBR1060-E3/45的Datasheet PDF文件第5页 
MBR10xx, MBRF10xx, MBRB10xx  
www.vishay.com  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (for TO-263AB package)  
2
2
1
MBR1045  
MBR1060  
PIN 1  
1
MBRF1045  
MBRF1060  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AC and ITO-220AC package)  
PIN 1  
CASE  
• AEC-Q101 qualified available  
PIN 2  
PIN 2  
(for ITO-220AC and D2PAK (TO-263AB) package)  
D2PAK (TO-263AB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
K
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
1
MBRB1045  
MBRB1060  
PIN 1  
K
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
PIN 2  
HEATSINK  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
PRIMARY CHARACTERISTICS  
IF(AV)  
10 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VRRM  
45 V, 60 V  
150 A  
IFSM  
VF  
0.57 V, 0.70 V  
150 °C  
meets JESD 201 class 2 whisker test  
TJ max.  
Package  
Diode variation  
Polarity: as marked  
TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
Mounting Torque: 10 in-lbs maximum  
Single  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBR1045  
MBR1060  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
45  
60  
V
A
IF(AV)  
10  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
IRRM  
dV/dt  
TJ  
1.0  
0.5  
Voltage rate of change (rated VR)  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +175  
Operating junction and storage temperature range  
TSTG  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Revision: 24-Nov-17  
Document Number: 88669  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

MBR1060-E3/45 替代型号

型号 品牌 替代类型 描述 数据表
MBR1060/45 VISHAY

完全替代

Rectifier Diode, Schottky, 1 Element, 10A, 60V V(RRM),
SBT1060 DIOTEC

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