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MBR1050CT-BP-HF PDF预览

MBR1050CT-BP-HF

更新时间: 2024-11-23 13:11:11
品牌 Logo 应用领域
美微科 - MCC 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 648K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 50V V(RRM), Silicon, TO-220AB,

MBR1050CT-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.23
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
最大非重复峰值正向电流:125 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大重复峰值反向电压:50 V
最大反向电流:100 µA表面贴装:NO
技术:SCHOTTKY端子面层:NOT SPECIFIED
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

MBR1050CT-BP-HF 数据手册

 浏览型号MBR1050CT-BP-HF的Datasheet PDF文件第2页 
M C C  
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21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MBR1030CT  
THRU  
MBR1060CT  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
High surge capacity, High current capability  
10 Amp  
Schottky Barrier  
Rectifier  
30-60 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +175°C  
TO-220AB  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
30V  
Maximum Maximum  
B
L
RMS  
DC  
M
Voltage  
Blocking  
Voltage  
C
D
A
K
MBR1030CT MBR1030CT  
MBR1035CT MBR1035CT  
MBR1040CT MBR1040CT  
MBR1045CT MBR1045CT  
MBR1050CT MBR1050CT  
MBR1060CT MBR1060CT  
21V  
24.5V  
30V  
35V  
E
F
PIN  
2
35V  
1
3
40V  
45V  
50V  
60V  
28V  
40V  
45V  
50V  
60V  
31.5V  
35V  
G
42V  
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified  
H
H
Average Forward  
Current  
IF(AV)  
10A  
TC = 105°C  
PIN 1  
PIN 3  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
125A  
8.3ms, half sine  
Maximum Forward  
Voltage Drop Per  
Element  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢀ ꢀ ꢀ ꢀ  
INCHES  
MM  
VF  
.70V  
.80V  
.57V  
.65V  
IFM = 5A  
ꢁꢂꢃ  
A
B
C
D
E
F
G
H
I
ꢃꢂꢄ  
.560  
.380  
.100  
.230  
.380  
------  
.500  
.090  
.020  
.012  
.139  
.140  
.045  
.080  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
6.86  
10.67  
6.35  
14.73  
2.79  
1.14  
0.64  
ꢄꢇꢈꢉ  
MBR1030CT-45CT  
.625  
.420  
.135  
25°C  
TJ =  
IFM = 5A  
125°C  
MBR1050CT-60CT  
MBR1030CT-45CT  
MBR1050CT-60CT  
2.54  
.270  
.420  
5.84  
9.65  
TJ =  
.250  
.580  
------  
12.70  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
0.1mA TJ = 25°C  
15mA  
IR  
.110  
2.29  
.045  
.025  
0.51  
0.30  
TJ = 125°C  
J
K
L
M
.161  
3.53  
4.09  
4.83  
1.40  
.190  
.055  
3.56  
1.14  
Typical Junction  
Capacitance  
N
.115  
2.03  
2.92  
CJ  
Measured at  
1.0MHz, VR=4.0V  
MBR1030CT-45CT  
MBR1050CT-60CT  
170pF  
220pF  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www. mccsemi.com  

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