Datasheet > MBR1060

MBR1060

更新时间： 2024-11-20 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管
页数	文件大小	规格书
2页	81K
描述
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。

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MBR1060 数据手册

MBR1050 thru MBR1060

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

12.70 14.73

14.23 16.51

9.66 10.66

C(TAB)

3.54

5.85

2.54

1.15

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

0.64

4.83

3.56

0.38

2.04

0.64

VRRM

VRMS

VDC

MBR1050

MBR1060

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

dv/dt

Maximum Average Forward Rectified Current @TC=125^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

150

Voltage Rate Of Change (Rated VR)

10000

V/us

IF=20A @TJ=25^oC

Maximum Forward

0.95

0.70

IF=20A @TJ=125^oC

Voltage

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

0.1

@TJ=125^oC

2.5

^oC/W

^oC

ROJC

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance (Note 2)

Operating Temperature Range

Storage Temperature Range

400

-55 to +150

-55 to +175

TSTG

^oC

NOTES: 1. Thermal Resistance Junction To Case.

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* High surge capacity

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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