Datasheet > MBR1050CT

MBR1050CT

更新时间： 2024-11-26 11:12:07

品牌	Logo	应用领域
SSC		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	153K
描述
Schottky Barrier Recitifier

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中文翻译

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MBR1050CT 数据手册

MBR1030CT-MBR1060CTꢀ

Schottky Barrier Recitifierꢀ

PRODUCT SUMMARY

TO-220

TO-220 Plastic-Encapsulate Transistors

1. ANODE

FEATURES

2. CATHODE

Scottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

3. ANODE

1 2 3

Very low forward voltage drop

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For use in low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

Pb-free; RoHS-compliant

ELECTRICAL CHARACTERISTICS

( Tamb = 25^oC unless otherwise specified )

MBR

Characteristic

Symbol

Unit

1030CT 1035CT 1040CT 1045CT 1050CT 1060CT

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

24.5

31.5

PMS Reverse Voltage

Average Rectified Output Current

125

1.0

(Note 1)

@ T_C=105℃

Non-Repetitive Peak Forward Surge Current

I_FSM

I_RRM

V_FM

I_RM

8.3ms Single half sine-wave superimposed on

rated load

(JEDEC Method)

Repetitive Peak Reverse Surge Current

@ t≤ 2.0µs

0.57

0.70

0.80

0.95

Forward Voltage Drop

@ I_F=5.0A, T_C=125℃

0.70

0.84

@ I_F=5.0A, T_C= 25℃

@ I_F=10A, T_C= 25℃

@ T_C= 25℃

0.1

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C=125℃

C_j

150

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

T_j, T_STG

-65 to +150

℃

Notes: 1. Thermal resistance junction to case mounted heat sink.

2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.

01/29/2007 Rev.1.00

www.SiliconStandard.com

中文翻译

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