是否Rohs认证: | 不符合 | 生命周期: | Contact Manufacturer |
包装说明: | LFBGA, BGA101,12X14,32 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.08 |
Is Samacsys: | N | 最长访问时间: | 90 ns |
其他特性: | ALSO INCLUDED 512K X 16 SRAM | JESD-30 代码: | R-PBGA-B101 |
JESD-609代码: | e0 | 长度: | 12 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 混合内存类型: | FLASH+SRAM |
功能数量: | 1 | 端子数量: | 101 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装等效代码: | BGA101,12X14,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 子类别: | Other Memory ICs |
最大压摆率: | 0.053 mA | 最大供电电压 (Vsup): | 3.3 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 11 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB84VD23280EA-90-PBS | FUJITSU |
获取价格 |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM | |
MB84VD23280EE | FUJITSU |
获取价格 |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM | |
MB84VD23280EE-90 | FUJITSU |
获取价格 |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM | |
MB84VD23280EE-90PBS | FUJITSU |
获取价格 |
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, PLASTIC, FBGA-101 | |
MB84VD23280EE-90-PBS | FUJITSU |
获取价格 |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM | |
MB84VD23280FA | SPANSION |
获取价格 |
64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM | |
MB84VD23280FA-70 | SPANSION |
获取价格 |
64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM | |
MB84VD23280FA-70PBS | SPANSION |
获取价格 |
64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM | |
MB84VD23381FJ | FUJITSU |
获取价格 |
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM | |
MB84VD23381FJ-80 | FUJITSU |
获取价格 |
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM |