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MB84VD23280EA-90-PBS PDF预览

MB84VD23280EA-90-PBS

更新时间: 2024-11-29 22:07:19
品牌 Logo 应用领域
富士通 - FUJITSU 闪存
页数 文件大小 规格书
45页 720K
描述
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

MB84VD23280EA-90-PBS 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:LFBGA,针数:101
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.08其他特性:512K X 16 SRAM ALSO AVAILABLE
JESD-30 代码:R-PBGA-B101长度:12 mm
内存密度:67108864 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:101字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:11 mmBase Number Matches:1

MB84VD23280EA-90-PBS 数据手册

 浏览型号MB84VD23280EA-90-PBS的Datasheet PDF文件第2页浏览型号MB84VD23280EA-90-PBS的Datasheet PDF文件第3页浏览型号MB84VD23280EA-90-PBS的Datasheet PDF文件第4页浏览型号MB84VD23280EA-90-PBS的Datasheet PDF文件第5页浏览型号MB84VD23280EA-90-PBS的Datasheet PDF文件第6页浏览型号MB84VD23280EA-90-PBS的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50211-1E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
64M (×8/×16) FLASH MEMORY &  
8M (×8/×16) STATIC RAM  
MB84VD23280EA-90/MB84VD23280EE-90  
FEATURES  
• Power supply voltage of 2.7 V to 3.3 V  
• High performance  
90 ns maximum access time (Flash)  
70 ns maximum access time (SRAM)  
• Operating Temperature  
–25 °C to +85 °C  
• Package 101-ball BGA  
(Continued)  
PRODUCT LINEUP  
Flash Memory  
SRAM  
+0.3V  
–0.3 V  
Ordering Part No.  
MB84VD23280EA-90/MB84VD23280EE-90  
VCCf, VCCs = 3.0 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
90  
90  
35  
70  
70  
35  
PACKAGE  
101-pin plastic FBGA  
BGA-101P-M01  

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