MASW-000834-13560T
HMICTM PIN Diode SPDT 50 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Rev. V8
Features
Functional Diagram (TOP VIEW)
• Exceptional Broadband Performance, 0.05 - 6.0 GHz
• Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA
• Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA
• High Isolation: Rx = 44dB @ 2010 MHz, 20mA / 5V
• High Isolation: Rx = 36dB @ 3.5 GHz, 20mA / 5V
• High TX RF Input Power = 50 W C.W. @ 2010MHz
• High Tx RF Input Peak Power > 1000 W
(Pin 16)
N/C GND
TX
GND
(Pin 1)
GND
N/C
• Suitable for Very High Power TD-SCDMA & WiMAX
ANT
GND
N/C
N/C
N/C
DC2
Applications
• Surface Mount 4mm PQFN Package, RoHS* Compliant
Description and Applications
The MASW-000834-13560T is a SPDT Broadband, high
linearity, common anode, PIN diode T/R switch for 0.05 -
6.0 GHz applications, including WiMAX & WiFi. The
device is provided in industry standard 4mm PQFN plastic
packaging. This device incorporates a PIN diode die
fabricated with M/A-COM Technology Solutions patented
Silicon-Glass HMICTM process. This chip features two
silicon pedestals embedded in a low loss, low dispersion
glass. The diodes are formed on the top of each pedestal.
The topside is fully encapsulated with silicon nitride and
has an additional polymer passivation layer. These
polymer protective coatings prevent damage and
contamination during handling and assembly.
N/C GND RX
GND
Pin Configuration:
(Center Metal Area is RF, D.C., and Thermal Ground)
Pin
1
Function
GND
ANT
Pin
9
Function
DC2
N/C
2
10
11
12
13
14
15
16
This compact 4mm PQFN package, SPDT switch offers
wideband 0.05 - 6.0 GHz performance with excellent
isolation to loss ratio for both TX and RX states. The PIN
diode provides 50 W typical C.W. power handling and 65
3
GND
N/C
N/C
4
N/C
5
N/C
GND
TX
dBm IIP3 at 2010 MHz
performance.
for
maximum
switch
6
GND
RX
7
GND
N/C
Absolute Maximum Ratings 1,2
@ TA = +25 °C (unless otherwise specified)
8
GND
Parameter
Forward Current
Absolute Maximum
Ordering Information
| 100 mA |
| -200 V |
Reverse Voltage ( RF & D.C. )
Operating Temperature
Storage Temperature
Junction Temperature
Part Number
Package
-40 °C to +85 °C
-55 °C to +150 °C
+175 °C
MASW-000834-13560T
MASW-000834-001SMB
Tape and Reel
Sample Board
3
Sample Board with recommended
external Driver & MASW-000834-
13560T Switch
50W (47 dBm)
@ 2010MHz
TX Incident C.W. Power
TX Peak Incident Power
MADR-008851-0001TB
>300 W, 5us, 1% duty
Static Sensitivity
1. Exceeding these limits may cause permanent damage.
2. M/A-COM Technology Solutions does not recommend sustained operation near
these survivability limits.
3. Baseplate Temperature must be controlled to a constant +25°C. See page 7 for
derating curve.
These devices are rated Class 1B Human Body.
Proper ESD control techniques should be used
when handling these devices.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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