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MASW-000834-13560T PDF预览

MASW-000834-13560T

更新时间： 2024-11-06 14:53:35
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
13页 553K
描述
HMIC? PIN Diode, 50W

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中文翻译

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MASW-000834-13560T 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：LCC16,.16SQ,25
Reach Compliance Code：compliant风险等级：0.83
Is Samacsys：N其他特性：HIGH ISOLATION
特性阻抗：50 Ω构造：COMPONENT
最大输入功率 (CW)：45.44 dBm最大插入损耗：0.575 dB
最小隔离度：13.6 dB安装特点：SURFACE MOUNT
功能数量：1端子数量：16
准时：0.2 µs最大工作频率：6000 MHz
最小工作频率：50 MHz最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：LCC16,.16SQ,25电源：5/25 V
射频/微波设备类型：SPDT子类别：RF/Microwave Switches
表面贴装：YESBase Number Matches：1

MASW-000834-13560T 数据手册

 浏览型号MASW-000834-13560T的Datasheet PDF文件第2页浏览型号MASW-000834-13560T的Datasheet PDF文件第3页浏览型号MASW-000834-13560T的Datasheet PDF文件第4页浏览型号MASW-000834-13560T的Datasheet PDF文件第5页浏览型号MASW-000834-13560T的Datasheet PDF文件第6页浏览型号MASW-000834-13560T的Datasheet PDF文件第7页 
HMICTM PIN Diode SPDT 50 W Switch for  
0.05 - 6.0 GHz High Power Applications  
MASW-000834  
Rev. V10  
Features  
Functional Diagram (Top View)  
•
•
Exceptional Broadband Performance  
Low Loss:  
TX = 0.33 dB @ 2010 MHz, 5 V / 20 mA  
TX = 0.38 dB @ 3.5 GHz, 5 V / 20 mA  
High Isolation:  
RX = 44 dB @ 2010 MHz, 20 mA / 5 V  
RX = 36 dB @ 3.5 GHz, 20 mA / 5 V  
High TX RF Input Power:  
50 W CW @ 2010 MHz  
High TX RF Input Peak Power:  
>1000 W  
Suitable for Very High Power TD-SCDMA &  
WiMAX Applications  
N/C  
1166  
N/C  
15  
TX  
14  
GND  
13  
•
GND  
ANT  
GND  
N/C  
N/C  
N/C  
N/C  
DC2  
1
12  
11  
10  
9
1
2
3
4
•
•
•
•
•
Surface Mount 4 mm PQFN Package  
RoHS* Compliant  
5
6
8
7
N/C  
GND  
RX  
GND  
Applications  
•
•
Aerospace & Defense  
Wireless Networking & Communication  
Pin Configuration1  
Pin  
Function  
GND  
ANT  
N/C2  
RX  
Description  
1,3,6,8,13,15  
The MASW-000834 is a SPDT broadband, high  
linearity, common anode, PIN diode T/R switch, for  
0.05 - 6.0 GHz applications, including WiMAX &  
WiFi. The device is provided in industry standard  
2
4,5,10,11,12,16  
4
mm PQFN plastic packaging. This device  
incorporates a PIN diode die fabricated with  
MACOMs’ patented silicon-glass HMICTM process.  
This chip features two silicon pedestals embedded  
in a low loss, low dispersion glass. The diodes are  
formed on the top of each pedestal. The topside is  
fully encapsulated with silicon nitride and has an  
additional polymer passivation layer that prevents  
damage and contamination during handling and  
assembly.  
7
9
DC2  
TX  
14  
17  
Pad  
1. The exposed pad centered on the package bottom must be  
connected to RF, DC and thermal ground.  
2. MACOM recommends connecting all No Connection (N/C) pins  
to ground.  
This compact SPDT switch offers wideband  
performance with excellent isolation to loss ratio for  
both TX and RX states. The PIN diode provides  
50 W typical CW power handling and 65 dBm IIP3  
at 2010 MHz for maximum switch performance.  
Ordering Information3  
This compact SPDT switch offers wideband  
performance with excellent isolation to loss ratio for  
both TX and RX states. The PIN diode provides 45 W  
CW power handling at an 85°C baseplate  
temperature and 72 dBm IIP3 at 2010 MHz for  
maximum switch performance.  
MASW-000834-13560T  
MASW-000834-001SMB  
1000 piece reel  
Sample Board  
3. Reference Application Note M513 for reel size information.  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0008120  
1234567...13

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