Datasheet > MASW-001100-1190

MASW-001100-1190

更新时间： 2024-11-05 03:18:15

品牌	Logo	应用领域
泰科 - TE		二极管开关射频微波
页数	文件大小	规格书
8页	387K
描述
Broadband Monolithic Silicon PIN Diode Switches

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中文翻译

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技术参数
数据手册

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MASW-001100-1190 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.12	Is Samacsys：	N
其他特性：	USABLE TO 26.5 GHZ	构造：	COMPONENT
最大输入功率 (CW)：	33.01 dBm	最大插入损耗：	1.2 dB
最大工作频率：	20000 MHz	最小工作频率：	6000 MHz
最高工作温度：	125 °C	最低工作温度：	-65 °C
射频/微波设备类型：	SPST	Base Number Matches：	1

MASW-001100-1190 数据手册

Broadband Monolithic

MASW-001100-1190

MASW-002100-1191

MASW-003100-1192

Silicon PIN Diode Switches

Rev 2.0

Features

• Broad Bandwidth

MASW-001100-1190

Specified from 50MHz to 20GHz

Usable from 50MHz to 26.5GHz

• Lower Insertion Loss / Higher Isolation than pHempt

• Rugged, Fully Monolithic, Glass Encapsulated

Construction

• Up to +33dBm C.W. Power Handling @ + 25°C

Description

The MASW-001100, MASW-002100 and

MASW-003100 are broadband monolithic switches using

series and shunt connected silicon PIN diodes. They

are designed for use as moderate signal, high

performance switches in applications up to 26.5GHz.

They provide performance levels superior to those

realized by hybrid MIC designs incorporating beam lead

and PIN chip diodes that require chip and wire

assembly.

MASW-002100-1191

These switches are fabricated using M/A-COM’s

patented HMIC^TM(Heterolithic Microwave Integrated

Circuit) process, US Patent 5,268,310. This process

allows the incorporation of silicon pedestals that form

series and shunt diodes or vias by imbedding them in

low loss, low dispersion glass. By using small spacing

between elements, this combination of silicon and glass

gives HMIC devices low loss and high isolation

performance through low millimeter frequencies.

MASW-003100-1192

Large bond pads facilitate the use of low inductance

ribbon leads, while gold backside metallization allows for

manual or automatic chip bonding via 80/20 AuSn solder

or conductive Ag epoxy.

@ +25°C

Absolute Maximum Ratings

Parameter

Absolute Maximum

-65^oC to +125^oC

-65^oC to +150^oC

+175^oC

| - 50V |

+33dBm C.W.

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

RF C.W. Incident Power

Bias Current +25°C

±20mA

Specification Subject to Change Without Notice

M/A-COM, Inc. _____________________________________________________________________________________

North America: Tel. (800) 366-2266

Fax (800) 618-8883

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

12 3 4 5 6 7 8

中文翻译

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与MASW-001100-1190相关器件

型号	品牌	获取价格	描述	数据表
MASW-001100-1190_2	TE	获取价格	HMIC Silicon PIN Diode Switches
MASW-001100-11900G	TE	获取价格	HMIC™ Silicon PIN Diode Switches RoHs Complia
MASW-001100-11900W	TE	获取价格	HMIC™ Silicon PIN Diode Switches RoHs Complia
MASW-001150-1316	TE	获取价格	SURMOUNT PIN Diode Switch Element with Thermal Terminal
MASW-001150-1316	MACOM	获取价格	HMIC PIN Diode,50W
MASW-001150-13160	TE	获取价格	SURMOUNT PIN Diode Switch Element
MASW-001150-13160_V5	TE	获取价格	SURMOUNT PIN Diode Switch Element
MASW-001150-13160P	TE	获取价格	SURMOUNT PIN Diode Switch Element with Thermal Terminal
MASW-001150-13160-V5	TE	获取价格	SURMOUNT PIN Diode Switch Element
MASW-001150-13160W	TE	获取价格	SURMOUNT PIN Diode Switch Element with Thermal Terminal

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