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MASW-002103-1363 PDF预览

MASW-002103-1363

更新时间: 2024-11-06 14:54:43
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描述
HMIC Silicon PIN Diode

MASW-002103-1363 数据手册

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Silicon SPDT HMIC™ PIN Diode Switch  
50 MHz - 20 GHz  
MASW-002103  
Rev. V12  
Functional Schematic  
Features  
Broad Bandwidth Specified 50 MHz - 20 GHz  
Usable up to 26 GHz  
Low Insertion Loss  
High Isolation  
Low Parasitic Capacitance & Inductance  
Silicon Nitride Passivation  
Fully Monolithic, Glass Encapsulated Chip  
Up to 38 dBm CW Power Handling @ +25°C  
RoHS* Compliant  
J3  
J1  
Applications  
Aerospace & Defense  
ISM  
J2  
Description  
Pin Configuration  
The MASW-002103-1363 is a SPDT, surmount,  
broadband, monolithic switch using two sets of  
series and shunt connected PIN diodes. This device  
is designed for use in broadband, low to moderate  
signal, high performance, switch applications up to  
20 GHz. It is a surface mountable switch configured  
for optimized performance and offers a distinct  
advantage over MMIC, beamlead and chip and wire  
hybrid designs. Because the PIN diodes of the  
MASW-002103-1363 are integrated into the chip  
and kept within close proximity, the parasitics  
typically associated with other designs that use  
individual components are kept to a minimum.  
Pin  
J1  
Function  
RFC  
J2  
RF1  
J3  
RF2  
Ordering Information  
To minimize the parasitics and achieve high  
performance the MASW-002103-1363 is fabricated  
using MACOMs HMIC(Heterolithic Microwave  
Integrated Circuit) process. This process allows the  
silicon pedestals, which form the series and shunt  
diodes or vias, to be imbeded in low loss, low  
dispersion glass. The combination of low loss glass  
and using tight spacing between elements results in  
an HMIC device with low loss and high isolation  
through low millimeter wave frequencies.  
Part Number  
Package  
MASW-002103-13630G  
MASW-002103-13635P  
MASW-002103-13630P  
MASW-002103-001SMB  
MASW-002103-002SMB  
50 piece gel pack  
500 piece reel  
3000 piece reel  
Sample Test Board  
Demo Board with  
MABT-011000 Bias Network  
The topside is fully encapsulated with silicon nitride  
and also has an additional layer of polymer for  
scratch and impact protection. The protective  
coating guards against damage to the junction and  
the anode airbridges during handling and assembly.  
On the backside of the chip gold metalized pads  
have been added to produce a solderable surmount  
device.  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0004853  

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